1N4148-G Comchip Technology, 1N4148-G Datasheet
1N4148-G
Manufacturer Part Number
1N4148-G
Description
DIODE FAST SW 150MA 75V DO-35
Manufacturer
Comchip Technology
Datasheet
1.1N4148-G.pdf
(2 pages)
Specifications of 1N4148-G
Voltage - Forward (vf) (max) @ If
1V @ 10mA
Voltage - Dc Reverse (vr) (max)
75V
Current - Average Rectified (io)
150mA
Current - Reverse Leakage @ Vr
5µA @ 75V
Diode Type
Standard
Speed
Small Signal =< 200mA (Io), Any Speed
Mounting Type
Through Hole
Package / Case
DO-204AH, DO-35, Axial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Capacitance @ Vr, F
-
Other names
1N4148T-G
641-1313-2
641-1313-2
641-1313-3
641-1313-2
641-1313-2
641-1313-3
Maximum Ratings
Electrical Characteristics
Notes: 1. Valid provided that device terminals are kept at ambient temperature.
Fast Switching Diode
Fast Switching Diode
1N4148 / 1N4448
Features
- Fast Switching Speed
- General Purpose Rectification
- Silicon Epitaxial Planar Construction
Mechanical Data
- Case: DO-35
- Terminals: Solderable per MIL-STD-202,
- Polarity: Cathode Band
- Weight: 0.13 grams (approx.)
MDS0312005A
High Speed
Non-Repetitive Peak Reverse Voltage
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current (Note 1)
Average Rectified Output Current (Note 1)
Non-Repetitive Peak Forward Surge Current @ t = 1.0s
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient Air (Note 1)
Operating and Storage Temperature Range
Maximum Forward Voltage
Maximum Peak Reverse Current
Capacitance
Reverse Recovery Time
Method 208
Derate Above 25°C
Characteristic
Characteristic
@ T
A
= 25°C unless otherwise specified
@ T
A
= 25°C unless otherwise specified
@ t = 1.0ms
1N4148
1N4448
1N4448
Symbol
V
I
RM
C
t
T
FM
Symbol
rr
V
j
V
V
j
R(RMS)
R
V
I
, T
I
FSM
RWM
V
P
RRM
FM
I
RM
qJA
O
R
d
STG
0.62
Min
¾
¾
¾
¾
¾
0.024 (0.60)
0.079 (2.0)
1N4148
Max.
Max.
300
Max
0.72
1.0
1.0
5.0
4.0
4.0
50
30
25
Dimensions in inches and (millimeters)
-65 to +175
1.68
100
150
500
300
1.0
2.0
75
53
Unit
mA
mA
mA
nA
pF
ns
V
DO-35
COMCHIP
COMCHIP
www.comchiptech.com
1N4448
500
I
I
I
V
V
V
V
V
V
F
F
F
I
F
R
R
R
R
R
R
= 10mA
= 5.0mA
= 100mA
= 10mA to I
= 6.0V, R
= 75V
= 70V, T
= 20V, T
= 20V
= 0, f = 1.0MHz
0.157 (4.0)
1.0 (25.4)
1.0 (25.4)
Test Condition
Max.
Min.
Min.
j
j
L
= 150°C
= 150°C
= 100W
R
mW/°C
=1.0mA
Unit
K/W
mW
mA
mA
°C
V
V
V
A
Page 1
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1N4148-G Summary of contents
Page 1
... Fast Switching Diode Fast Switching Diode 1N4148 / 1N4448 High Speed Features - Fast Switching Speed - General Purpose Rectification - Silicon Epitaxial Planar Construction Mechanical Data - Case: DO-35 - Terminals: Solderable per MIL-STD-202, Method 208 - Polarity: Cathode Band - Weight: 0.13 grams (approx.) Maximum Ratings @ T = 25°C unless otherwise specified ...
Page 2
Fast Switching Diode Fast Switching Diode Ratings and Characteristic Curves (TA = 25°C unless otherwise noted) 1000 100 10 1.0 0.1 0. INSTANTANEOUS FORWARD VOLTAGE (V) F Fig. 1 Forward Characteristics MDS0312005A COMCHIP COMCHIP www.comchiptech.com 10,000 ...