DMN3005LK3-13 Diodes Inc, DMN3005LK3-13 Datasheet - Page 3

• Manufacturer Part Number: DMN3005LK3-13
• Description: MOSFET N-CH 30V 14.5A TO252-3L
• Manufacturer: Diodes Inc

Specifications of DMN3005LK3-13

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 5 mOhm @ 20A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 14.5A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 46.9nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 4342pF @ 15V
• Power - Max: 1.68W
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: DMN3005LK3-13DITR

DMN3005LK3
Document number: DS33318 Rev. 2 - 2
0.036
0.032
0.028
0.024
0.020
0.016
0.012
0.008
0.004
0.040
0.010
0.009
0.008
0.007
0.006
0.005
0.004
0.003
0.002
0.001
50
40
30
20
10
0
0
0
0
-50
0
Fig. 5 On-Resistance Variation with Temperature
V
V , DRAIN-SOURCE VOLTAGE (V)
-25
GS
Fig.1 Typical Output Characteristics
DS
V
1
5
GS
V
T , JUNCTION TEMPERATURE ( C)
= 2.8V
vs. Drain Current and Gate Voltage
V
GS
J
GS
I = 20A
V
= 3.0V
D
GS
Fig. 3 Typical On-Resistance
= 3.5V
= 4.5A
0
I , DRAIN CURRENT (A)
= 4.5V
D
10
2
25
V
V
V
GS
GS
GS
15
= 2.5V
= 4.5V
50
= 1.8V
3
75
V
20
GS
= 2.5V
100
4
V
GS
25
= 2.0V
°
125 150
5
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Fig. 6 Gate Threshold Variation vs. Ambient Temperature
0.010
0.012
0.008
0.006
0.004
0.002
30
25
20
15
10
1.0
0.8
0.6
0.4
0.2
5
0
0
-50
0
0
0
V
DS
0.5
-25
= 5.0V
Fig. 4 Typical Drain-Source On-Resistance
Fig. 2 Typical Transfer Characteristics
V
T , AMBIENT TEMPERATURE (°C)
GS
5
A
vs. Drain Current and Temperature
I = 250µA
D
T = 85°C
, GATE SOURCE VOLTAGE(V)
1
A
0
T = 125°C
A
I , DRAIN CURRENT (A)
D
T = 150°C
A
1.5
I = 1mA
10
D
25
2
50
15
T = -55°C
2.5
A
T = 25°C
75
A
20
DMN3005LK3
100
3
V
T = 125°C
T = 150°C
GS
T = 85°C
T = 25°C
T = -55°C
A
A
A
A
A
© Diodes Incorporated
3.5
125 150
25
= 4.5V
October 2010
4
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