IXTH16N20D2 IXYS, IXTH16N20D2 Datasheet

no-image

IXTH16N20D2

Manufacturer Part Number
IXTH16N20D2
Description
MOSFET N-CH 200V 16A TO-247
Manufacturer
IXYS
Datasheet

Specifications of IXTH16N20D2

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Depletion Mode
Rds On (max) @ Id, Vgs
73 mOhm @ 8A, 0V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
16A
Gate Charge (qg) @ Vgs
208nC @ 5V
Input Capacitance (ciss) @ Vds
5500pF @ 25V
Power - Max
695W
Mounting Type
Through Hole
Package / Case
TO-247
Vds, Max, (v)
200
Id(on), Min, (a)
16
Rds(on), Max, (?)
0.073
Vgs(off), Max, (v)
-4
Ciss, Typ, (pf)
5500
Crss, Typ, (pf)
607
Qg, Typ, (nc)
208
Pd, (w)
695
Rthjc, Max, (ºc/w)
-
Package Style
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Vgs(th) (max) @ Id
-
Depletion Mode
MOSFET
N-Channel
Symbol
V
V
V
V
P
T
T
T
T
T
M
Weight
Symbol
(T
BV
V
I
I
R
I
© 2010 IXYS CORPORATION, All Rights Reserved
GSX
DSX(off)
D(on)
J
JM
stg
L
SOLD
DSX
DGX
GSX
GSM
D
GS(off)
DS(on)
d
J
DSX
= 25°C, Unless Otherwise Specified)
TO-268
Test Conditions
T
T
Continuous
Transient
T
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
Mounting Torque (TO-247)
TO-247
V
V
V
V
V
V
Test Conditions
J
J
C
GS
DS
GS
DS
GS
GS
= 25°C to 150°C
= 25°C to 150°C, R
= 25°C
= - 5V, I
= 25V, I
= ±20V, V
= V
= 0V, I
= 0V, V
DSX
D
, V
DS
D
D
= 8A, Note 1
= 1mA
= 250μA
GS
= 25V, Note 1
DS
= - 5V
= 0V
GS
= 1MΩ
Advance Technical Information
T
J
= 125°C
IXTH16N20D2
IXTT16N20D2
- 2.0
Characteristic Values
Min.
200
- 55 ... +150
- 55 ... +150
16
Maximum Ratings
1.13 / 10
200
200
±20
±30
695
150
300
260
Typ.
6
4
Max.
±100 nA
- 4.0
Nm/lb.in.
100 μA
73 mΩ
5 μA
°C
°C
°C
°C
°C
W
V
V
V
V
V
V
A
g
g
V
I
R
TO-247 (IXTH)
TO-268 (IXTT)
G = Gate
S = Source
Features
• Normally ON Mode
• International Standard Packages
• Molding Epoxies Meet UL 94 V-0
Advantages
• Easy to Mount
• Space Savings
• High Power Density
Applications
• Audio Amplifiers
• Start-up Circuits
• Protection Circuits
• Ramp Generators
• Current Regulators
• Active Loads
D(on)
Flammability Classification
DS(on)
DSX
G
D
≤ ≤ ≤ ≤ ≤
=
>
S
G
D
Tab = Drain
S
200V
16A
73mΩ Ω Ω Ω Ω
D (Tab)
D (Tab)
= Drain
DS100260(4/10)

Related parts for IXTH16N20D2

IXTH16N20D2 Summary of contents

Page 1

... GSX DSX(off) DS DSX 0V 8A, Note 1 DS(on 0V 25V, Note 1 D(on © 2010 IXYS CORPORATION, All Rights Reserved Advance Technical Information IXTH16N20D2 IXTT16N20D2 Maximum Ratings 200 = 1MΩ 200 GS ±20 ±30 695 - 55 ... +150 150 - 55 ... +150 300 260 1. Characteristic Values Min. Typ. 200 - 2 125° ...

Page 2

... Characteristic Values Min. Typ. = 75° 420 C Characteristic Values Min. Typ. 0.8 265 14.3 1.9 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXTH16N20D2 IXTT16N20D2 TO-247 (IXTH) Outline Max Terminals Gate 3 - Source nC Dim. Millimeter nC Min 4.7 A 2.2 1 0.18 ° ...

Page 3

... J 1.E+10 1.E+09 1.E+08 1.E+07 1.E+06 1.E+05 1.E+04 1.E+03 1.E+02 1.E+ Fig. 2. Extended Output Characteristics @ 1. Volts DS Fig. 4. Drain Current @ 2. Volts DS Fig. 6. Dynamic Resistance vs. Gate Voltage T = 25º 100º Volts GS IXTH16N20D2 IXTT16N20D2 = 25º - 25º ∆ 50V - 25V ...

Page 4

... Normalized to I DS(on) vs. Drain Current 2 2.2 1.8 1 125º 25ºC J 0.6 0 Amperes D Fig. 10. Transconductance 20V 40ºC, 25ºC, 125º Amperes D Fig. 12. Forward Voltage Drop of Intrinsic Diode -10V 125º 0.3 0.4 0.5 0 Volts SD IXTH16N20D2 IXTT16N20D2 = 8A Value 25ºC J 0.7 0.8 0.9 ...

Page 5

... Single Pulse 100 25µs 100µs 1ms 10 10ms 100ms DC 1 100 Fig. 17. Maximum Transient Thermal Impedance 1,000 1 Fig. 17. Maximum Transient Thermal Impedance hvjv 0.001 0.01 Pulse Width - Seconds IXTH16N20D2 IXTT16N20D2 Fig. 14. Gate Charge = 100V 10mA 100 120 140 Q - NanoCoulombs G Fig. 16. Forward-Bias Safe Operating Area @ T = 75º ...

Related keywords