BLF7G22L-200,118 NXP Semiconductors, BLF7G22L-200,118 Datasheet - Page 5

• Manufacturer Part Number: BLF7G22L-200,118
• Description: TRANSISTOR PWR LDMOS SOT502
• Manufacturer: NXP Semiconductors

Specifications of BLF7G22L-200,118

• Package / Case: SOT502A
• Transistor Type: LDMOS
• Frequency: 2.11GHz ~ 2.17GHz
• Gain: 18.5dB
• Voltage - Rated: 65V
• Current Rating: 29.5A
• Current - Test: 1.62A
• Voltage - Test: 28V
• Power - Output: 30W
• Mounting Style: SMD/SMT
• Configuration: Single
• Drain-source Breakdown Voltage: 65 V
• Continuous Drain Current: 29.5 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

NXP Semiconductors
BLF7G22L-200_7G22LS-200
Preliminary data sheet
Fig 4.
Fig 6.
(dB)
G
(1) f = 2110 MHz
(2) f = 2140 MHz
(3) f = 2170 MHz
19.0
18.6
18.2
17.8
17.4
17.0
p
0
V
at 0.01 % probability on the CCDF.
Power gain and drain efficiency as functions
of average load power; typical values
V
Adjacent power channel ratio (5 MHZ) as function of average load power; typical values
DS
DS
= 28 V; I
= 28 V; I
G
η
D
p
20
7.4 1-carrier W-CDMA
Dq
Dq
= 1620 mA; f = 2140 MHz; PAR = 7.2 dB
= 1620 mA; PAR = 7.2 dB at 0.01 % probability on the CCDF.
40
60
ACPR
(dBc)
−25
−35
−45
−55
5M
0
80
All information provided in this document is subject to legal disclaimers.
P
001aan066
L(AV)
BLF7G22L-200; BLF7G22LS-200
(W)
20
100
50
40
30
20
10
0
Rev. 3 — 1 April 2011
(%)
η
D
40
Fig 5.
60
PAR
(1) f = 2110 MHz
(2) f = 2140 MHz
(3) f = 2170 MHz
8
6
4
2
30
V
probability on the CCDF.
Peak-to-average power ratio as function of
peak power; typical values
80
DS
P
001aan068
L(AV)
= 28 V; I
(1)
(2)
(3)
(W)
100
Dq
110
= 1620 mA; PAR = 7.2 dB at 0.01 %
(1)
(2)
(3)
Power LDMOS transistor
190
P
© NXP B.V. 2011. All rights reserved.
L(M)
001aan067
(W)
270
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