BLF7G22LS-200,118 NXP Semiconductors, BLF7G22LS-200,118 Datasheet
BLF7G22LS-200,118
Specifications of BLF7G22LS-200,118
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BLF7G22LS-200,118 Summary of contents
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... BLF7G22L-200; BLF7G22LS-200 Power LDMOS transistor Rev. 3 — 1 April 2011 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 2110 MHz to 2170 MHz. Table 1. Typical RF performance at T Mode of operation 2-carrier W-CDMA [1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 8 0.01 % probability on CCDF; ...
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... NXP Semiconductors 2. Pinning information Table 2. Pin BLF7G22L-200 (SOT502A BLF7G22LS-200 (SOT502B [1] Connected to flange. 3. Ordering information Table 3. Type number BLF7G22L-200 BLF7G22LS-200 4. Limiting values Table 4. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol stg Thermal characteristics Table 5. Symbol Parameter R th(j-c) BLF7G22L-200_7G22LS-200 Preliminary data sheet BLF7G22L-200 ...
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... Symbol P L(AV η D ACPR 7.1 Ruggedness in class-AB operation The BLF7G22L-200 and BLF7G22LS-200 are capable of withstanding a load mismatch corresponding to VSWR = through all phases under the following conditions BLF7G22L-200_7G22LS-200 Preliminary data sheet BLF7G22L-200; BLF7G22LS-200 Characteristics C unless otherwise specified. drain-source breakdown voltage V gate-source threshold voltage ...
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... 1620 mA ( 2110 MHz ( 2140 MHz ( 2170 MHz Fig 2. Power gain as a function of average load power; typical values BLF7G22L-200_7G22LS-200 Preliminary data sheet BLF7G22L-200; BLF7G22LS-200 Typical impedance = 1620 mA [ (Ω) 1.05 − j4.04 1.18 − j4.17 1.32 − j4.68 1.58 − j4.37 2.55 − j5.14 ...
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... Power gain and drain efficiency as functions of average load power; typical values = 1620 mA; PAR = 7 0.01 % probability on the CCDF ( 2110 MHz ( 2140 MHz ( 2170 MHz Fig 6. Adjacent power channel ratio (5 MHZ) as function of average load power; typical values BLF7G22L-200_7G22LS-200 Preliminary data sheet BLF7G22L-200; BLF7G22LS-200 001aan066 50 η D (%) 100 ...
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... 1620 mA; Channel Spacing = 5 MHz PAR = 8 0.01 % probability on the CCDF. ( 2110 MHz ( 2140 MHz ( 2170 MHz Fig 9. Drain efficiency as function of average load power; typical values BLF7G22L-200_7G22LS-200 Preliminary data sheet BLF7G22L-200; BLF7G22LS-200 001aan069 50 19.0 η (%) (dB) 40 18.6 30 18.2 20 17.8 10 17.4 0 17.0 80 120 ...
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... C10 C11 C12 C13, C14 C15 R1 [1] TDK or capacitor of same quality. [2] American Technical Ceramics type 100B or capacitor of same quality. BLF7G22L-200_7G22LS-200 Preliminary data sheet BLF7G22L-200; BLF7G22LS-200 C10 C5 50.000 mm List of components for component layout. Description multilayer ceramic chip capacitor multilayer ceramic chip capacitor ...
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... UNIT 12.83 4.72 0.15 20.02 mm 12.57 3.43 0.08 19.61 0.505 0.186 0.006 0.788 inches 0.135 0.495 0.772 0.003 OUTLINE VERSION IEC SOT502A Fig 12. Package outline SOT502A BLF7G22L-200_7G22LS-200 Preliminary data sheet BLF7G22L-200; BLF7G22LS-200 scale 19.96 9.50 9.53 1.14 19.94 5.33 19.66 9.30 9 ...
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... DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) c UNIT 12.83 4.72 0.15 20.02 mm 12.57 3.43 0.08 19.61 0.505 0.186 0.006 0.788 inches 0.135 0.495 0.772 0.003 OUTLINE VERSION IEC SOT502B Fig 13. Package outline SOT502B BLF7G22L-200_7G22LS-200 Preliminary data sheet BLF7G22L-200; BLF7G22LS-200 scale 19.96 9.50 9.53 1.14 19.94 5.33 19.66 9 ...
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... Revision history Document ID BLF7G22L-200_7G22LS-200 v.3 20110401 Modifications: BLF7G22L-200_7G22LS-200 v.2 20101228 BLF7G22L-200_7G22LS-200 v.1 20100419 BLF7G22L-200_7G22LS-200 Preliminary data sheet BLF7G22L-200; BLF7G22LS-200 Abbreviations Description Third Generation Partnership Project Complementary Cumulative Distribution Function Continuous Wave Dedicated Physical CHannel Laterally Diffused Metal Oxide Semiconductor Laterally Diffused Metal Oxide Semiconductor Transistor ...
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... BLF7G22L-200_7G22LS-200 Preliminary data sheet BLF7G22L-200; BLF7G22LS-200 [3] Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. ...
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... For sales office addresses, please send an email to: BLF7G22L-200_7G22LS-200 Preliminary data sheet BLF7G22L-200; BLF7G22LS-200 NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ ...
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... Trademarks Contact information Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 BLF7G22L-200; BLF7G22LS-200 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Power LDMOS transistor All rights reserved ...