TEMT1000 Vishay, TEMT1000 Datasheet - Page 5

• Manufacturer Part Number: TEMT1000
• Description: Photodetector Transistors 5V 100mW 880nm
• Manufacturer: Vishay
• Type: IR Chipr

Specifications of TEMT1000

• Maximum Power Dissipation: 100 mW
• Maximum Dark Current: 200 nA
• Maximum Operating Temperature: + 85 C
• Minimum Operating Temperature: - 40 C
• Package / Case: SMD
• Transistor Polarity: NPN
• Wavelength Typ: 880nm
• Power Consumption: 100mW
• Viewing Angle: 15°
• No. Of Pins: 2
• Peak Reflow Compatible (260 C): No
• Leaded Process Compatible: Yes
• Voltage - Collector Emitter Breakdown (max): 70V
• Current - Collector (ic) (max): 50mA
• Current - Dark (id) (max): 200nA
• Wavelength: 950nm
• Power - Max: 100mW
• Mounting Type: Surface Mount
• Orientation: Top View
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

TEMT1000, TEMT1020, TEMT1030, TEMT1040
Silicon NPN Phototransistor, RoHS Compliant
Vishay Semiconductors
PACKAGE DIMENSIONS in millimeters: TEMT1020
16105
PACKAGE DIMENSIONS in millimeters: TEMT1030
16756
www.vishay.com
For technical questions, contact: [e-mail]
Document Number: 81554
480
Rev. 1.6, 09-Sep-08