UPC8151TB-EV19 CEL, UPC8151TB-EV19 Datasheet

UPC8151TB-EV19

Manufacturer Part Number

UPC8151TB-EV19

Description

WiFi / 802.11 Modules & Development Tools For UPC8151TB-A at 1.9 GHz

Manufacturer

CEL

Datasheet

1.UPC8151TB-EV09.pdf (10 pages)

Specifications of UPC8151TB-EV19

Wireless Frequency

1.9 GHz

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

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ELECTRICAL CHARACTERISTICS

FEATURES

• SUPPLY VOLTAGE: Vcc = 2.4 to 3.3 V

• LOW CURRENT CONSUMPTION:

• HIGH EFFICIENCY:

• POWER GAIN:

• OPERATING FREQUENCY:

• EXCELLENT ISOLATION:

• HIGH DENSITY SURFACE MOUNTING:

NEC's UPC8151TB is a silicon RFIC designed as a buffer

amplifier for cellular or cordless telephones. This low current

amplifier operates on 3.0 V and is housed in a 6 pin super

minimold package.

The IC is manufactured using NEC's 20 GHz f

silicon bipolar process. This process uses silicon nitride

passivation film and gold electrodes. These materials protect

the chip surface from external pollution and prevent corrosion/

migration. Thus, this IC has excellent performance, uniformity

and reliability.

DESCRIPTION

SYMBOLS

UPC8151TB; Icc = 4.2 mA TYP @ 3.0 V

UPC8151TB; P

UPC8151TB; G

100 MHz to 1900 MHz (Output port LC matching)

UPC8151TB; ISOL = 38 dB TYP @ f = 1 GHz

6 pin super minimold or SOT-363 package

ISOL

Icc

1dB

OUT

Circuit Current, No signal

Power Gain

Output Power at 1 dB Compression Point

Noise Figure

Input Return Loss(without matching circuit)

Output Return Loss (with external matching circuit)

3rd Order Intermodulation Distortion

Isolation

= 1.000 GHz, f

= 1.900 GHz, f

CELLULAR/CORDLESS TELEPHONES

1dB

PARAMETERS AND CONDITIONS

= 12.5 dB TYP @ f = 1 GHz

= +2.5 dBm TYP @ f = 1 GHz

PACKAGE OUTLINE

PART NUMBER

LOW CURRENT AMPLIFIER FOR

= 1.001 GHz, P

= 1.901 GHz, P

f = 1.00 GHz

f = 1.90 GHz

f = 1.00 GHz

f = 1.90 GHz

f = 1.00 GHz

f = 1.90 GHz

f = 1.00 GHz

f = 1.90 GHz

f = 1.00 GHz

f = 1.90 GHz

f = 1.00 GHz

f = 1.90 GHz

O(each)

NESAT™ III

= -20 dBm

= 25 °C, V

= V

OUT

SILICON RFIC

= 3.0 V, Z

UNITS

dBm

dBc

= Z

California Eastern Laboratories

+20

+10

-10

+20

+10

-10

Tuned at 1 GHz

0.3

Tuned at 1.9 GHz

0.3

= 50 Ω, at LC matched frequency)

INSERTION POWER GAIN vs.

FREQUENCY AND VOLTAGE

12.0

33.0

29.0

MIN

-1.0

-3.0

2.8

9.5

2.0

1.0

–

Frequency, f (GHz)

= 3.3 V

= 3.0 V

1.0

UPC8151TB

1.0

UPC8151TB

-62.0

SO6

TYP

12.5

15.0

38.0

34.0

+2.5

+0.5

10.0

12.0

= 3.0 V V

4.2

6.0

5.0

4.0

54.0

= 3.3 V

= 2.4 V

3.0

MAX

14.5

17.0

5.8

7.5

–

Related parts for UPC8151TB-EV19

UPC8151TB-EV19 Summary of contents

Page 1

... TYP @ GHz P • OPERATING FREQUENCY: 100 MHz to 1900 MHz (Output port LC matching) • EXCELLENT ISOLATION: UPC8151TB; ISOL = 38 dB TYP @ GHz • HIGH DENSITY SURFACE MOUNTING: 6 pin super minimold or SOT-363 package DESCRIPTION NEC's UPC8151TB is a silicon RFIC designed as a buffer amplifier for cellular or cordless telephones. This low current amplifier operates on 3 ...

Page 2

ABSOLUTE MAXIMUM RATINGS SYMBOLS PARAMETERS V Supply Voltage CC P Total Power Dissipation Operating Temperature A T Storage Temperature STG Notes: 1. Operation in excess of any one of these parameters may result in permanent damage. 2. ...

Page 3

... TYPICAL APPLICATION EXAMPLE Location Examples in Digital Cellular PRODUCT LINE- +25 ° PARAMETER PART NO. Icc (mA) UPC8128TB 2.8 UPC8151TB 4.5 UPC8152TB 5.6 TYPICAL PERFORMANCE CURVES CIRCUIT CURRENT vs. VOLTAGE 6 No Signals Supply Voltage VCO N PLL = 3 Ω OUTPUT PORT MATCHING FREQUENCY 1 GHz 1.9 GHz G ISOL P G ISOL ...

Page 4

TYPICAL PERFORMANCE CURVES 1.0 GHz OUTPUT PORT MATCHING INSERTION POWER GAIN vs. FREQUENCY AND VOLTAGE +20 +10 0 -10 -20 -30 -40 -50 0.1 0.3 Frequency, f (GHz) ISOLATION vs. FREQUENCY AND VOLTAGE -30 -40 - 3.0 V ...

Page 5

TYPICAL PERFORMANCE CURVES 1.0 GHz OUTPUT PORT MATCHING OUTPUT RETURN LOSS vs. FREQUENCY AND VOLTAGE +10 0 -10 -20 -30 0.1 1.0 0.3 Frequency, f (GHz) OUTPUT POWER vs. INPUT POWER AND VOLTAGE + ...

Page 6

TYPICAL PERFORMANCE CURVES 1.0 GHz Output Port Matching NOISE FIGURE vs. VOLTAGE 7.5 7.0 6.5 6.0 5.5 5.0 4.5 2.0 2.5 3.0 Voltage, V (V) CC 1.9 GHz Output Port Matching INSERTION POWER GAIN vs. FREQUENCY AND VOLTAGE +20 V ...

Page 7

TYPICAL PERFORMANCE CURVES 1.9 GHz Output Port Matching OUTPUT POWER vs. INPUT POWER AND VOLTAGE + 3 -10 -15 -20 -25 -30 -40 -35 -30 -25 -20 -15 Input Power 3RD ...

Page 8

TYPICAL SCATTERING PARAMETERS 3 —Frequency 3 4 OUT CC FREQUENCY S 11 MHz MAG ANG 100 .843 -16.0 200 .752 -27.1 300 .666 -32.4 400 .603 ...

Page 9

... DATA SUBJECT TO CHANGE WITHOUT NOTICE LEAD CONNECTIONS (Top View) 3 +0.1 0 INPUT 2. GND 3. GND 4. OUTPUT 5. GND 6. Vcc +0.1 0.15 -0.5 MARKING C2U L1 FOUR 900 MHz 1900 MHz 50Ω C1 OUT RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS 4-282 UPC8151TB (Bottom View 0.68 pF All Other 2.7 nH 0.47 pF Caps = 1000 pF 9/29/2000 ...

Page 10

... CAS numbers and other limited information may not be available for release event shall CEL’s liability arising out of such information exceed the total purchase price of the CEL part(s) at issue sold by CEL to customer on an annual basis. ...

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