1N4150-TAP Vishay, 1N4150-TAP Datasheet

Diodes (General Purpose, Power, Switching) Vr/50V Io/150mA

1N4150-TAP

Manufacturer Part Number
1N4150-TAP
Description
Diodes (General Purpose, Power, Switching) Vr/50V Io/150mA
Manufacturer
Vishay
Datasheet

Specifications of 1N4150-TAP

Product
Switching Diodes
Peak Reverse Voltage
50 V
Forward Continuous Current
300 mA
Max Surge Current
4 A
Configuration
Single
Recovery Time
4 ns
Forward Voltage Drop
0.54 V to 1 V
Maximum Reverse Leakage Current
0.1 uA
Maximum Power Dissipation
500 mW
Operating Temperature Range
+ 175 C
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 65 C
Mounting Style
Through Hole
Package / Case
DO-35
Diode Type
Small Signal
Forward Current If(av)
150mA
Repetitive Reverse Voltage Vrrm Max
50V
Forward Voltage Vf Max
1V
Reverse Recovery Time Trr Max
4ns
Forward Surge Current Ifsm Max
4A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Small Signal Fast Switching Diodes
Features
Applications
Mechanical Data
Case: DO-35
Weight: approx. 125 mg
Cathode band color: black
Parts Table
Absolute Maximum Ratings
T
Thermal Characteristics
T
Document Number 85522
Rev. 1.8, 20-Aug-10
• Silicon Epitaxial Planar Diode
• Low forward voltage drop
• AEC-Q101 qualified
• High forward current capability
• Compliant to RoHS directive 2002/95/EC
• Halogen-free
• High speed switch and general purpose use in
1N4150
Repetitive peak reverse voltage
Reverse voltage
Peak forward surge current
Average peak forward current
Forward continuous current
Average forward current
Power dissipation
Thermal resistance junction to ambient air
Junction temperature
Storage temperature range
amb
amb
and in accordance to WEEE 2002/96/EC
definition
computer and industrial applications
= 25 °C, unless otherwise specified
= 25 °C, unless otherwise specified
Parameter
Part
Parameter
according
DiodesAmericas@vishay.com, DiodesAsia@vishay.com,
For technical questions within your region, please contact one of the following:
1N4150-TR or 1N4150-TAP
to
l = 4 mm, T
l = 4 mm, T
Test condition
IEC
Ordering code
t
p
V
l = 4 mm, T
= 1 µs
R
= 0
L
61249-2-21
L
Test condition
= 45 °C
≤ 25 °C
L
= constant
Packaging codes/options:
TR/10 k per 13" reel (52 mm tape), 50 k/box
TAP/10 k per Ammopack (52 mm tape), 50 k/box
Symbol
V
I
I
I
P
P
FSM
FRM
RRM
V
FAV
I
Type Marking
F
tot
tot
R
Symbol
1N4150
R
T
thJA
T
DiodesEurope@vishay.com
stg
j
Vishay Semiconductors
- 65 to + 175
Value
600
300
150
440
500
50
50
4
Value
350
175
Tape and Reel/Ammopack
Remarks
94 9367
1N4150
www.vishay.com
Unit
mW
mW
mA
mA
mA
Unit
K/W
V
V
A
°C
°C
1

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1N4150-TAP Summary of contents

Page 1

... High speed switch and general purpose use in computer and industrial applications Mechanical Data Case: DO-35 Weight: approx. 125 mg Cathode band color: black Parts Table Part 1N4150 1N4150-TR or 1N4150-TAP Absolute Maximum Ratings °C, unless otherwise specified amb Parameter Repetitive peak reverse voltage Reverse voltage Peak forward surge current ...

Page 2

... Vishay Semiconductors Electrical Characteristics °C, unless otherwise specified amb Parameter Forward voltage Reverse current MHz, V Diode capacitance (10 to 100) mA Reverse recovery time x I Typical Characteristics °C, unless otherwise specified amb 100 Scattering Limit 10 1 0 120 T - Junction Temperature (°C) ...

Page 3

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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