VS-8E2TX06-E Vishay, VS-8E2TX06-E Datasheet - Page 5

Rectifiers 8A 600V Hyperfast 16ns TO-220AC

VS-8E2TX06-E

Manufacturer Part Number
VS-8E2TX06-E
Description
Rectifiers 8A 600V Hyperfast 16ns TO-220AC
Manufacturer
Vishay
Datasheet

Specifications of VS-8E2TX06-E

Product
Ultra Fast Recovery Rectifier
Configuration
Single
Reverse Voltage
600 V
Forward Voltage Drop
1 V
Recovery Time
255 ns
Forward Continuous Current
16 A
Max Surge Current
125 A
Reverse Current Ir
10 uA
Mounting Style
Through Hole
Package / Case
TO-220AC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
VS-8E2TX06-E
Manufacturer:
VISHAY/威世
Quantity:
20 000
Document Number: 93171
Revision: 18-Aug-10
93171_09
40
30
20
10
Fig. 9 - Typical Reverse Recovery Time vs. dI
100
dI
I
F
F
DiodesAmericas@vishay.com, DiodesAsia@vishay.com,
= 8 A, T
/dt (A/μs)
I
For technical questions within your region, please contact one of the following:
F
(1) dI
(2) I
(3) t
0
= 8 A, T
from zero crossing point of negative
going I
through 0.75 I
extrapolated to zero current.
RRM
through zero crossing
rr
I
J
F
F
VS-8E2TX06-E, VS-8E2TX06-M, VS-8E2TX06FP-E
- reverse recovery time measured
= 25 °C
/dt - rate of change of current
- peak reverse recovery current
J
= 125 °C
F
to point where a line passing
Fig. 12 - Reverse Recovery Waveform and Definitions
Fig. 11 - Reverse Recovery Parameter Test Circuit
Hyperfast Rectifier, 8 A FRED Pt
RRM
and 0.50 I
1000
(1)
adjust
F
dI
/dt
F
/dt
dI
F
/dt
RRM
L = 70 μH
G
t
a
(2)
V
(3)
R
= 200 V
I
RRM
t
0.01 Ω
D
rr
93171_10
S
(4) Q
(5) dI
IRFP250
and I
current during t
rr
(rec)M
0.75 I
- area under curve defined by t
40
35
30
25
20
15
10
RRM
t
D.U.T.
/dt - peak rate of change of
b
100
RRM
DiodesEurope@vishay.com
dI
0.5 I
Fig. 10 - Typical Stored Charge vs. dI
Q
(rec)M
rr
Q
=
RRM
b
rr
/dt
portion of t
t
(4)
rr
®
x I
(5)
2
RRM
Vishay Semiconductors
I
dI
F
rr
= 8 A, T
F
/dt (A/μs)
I
F
= 8 A, T
rr
J
= 25 °C
J
= 125 °C
www.vishay.com
F
/dt
1000
5

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