SS24 Taiwan Semiconductor, SS24 Datasheet
SS24
Manufacturer Part Number
SS24
Description
Schottky (Diodes & Rectifiers) 2A 40V
Manufacturer
Taiwan Semiconductor
Datasheet
1.SS22.pdf
(2 pages)
Specifications of SS24
Product
Schottky Rectifiers
Peak Reverse Voltage
40 V
Forward Continuous Current
2 A
Max Surge Current
50 A
Configuration
Single
Forward Voltage Drop
0.5 V
Maximum Reverse Leakage Current
0.4 mA
Operating Temperature Range
- 65 C to + 125 C
Mounting Style
SMD/SMT
Package / Case
SMB
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
R4
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BATCH
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41 652
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Part Number:
SS24-7002E3/5BT
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20 000
Part Number:
SS24-E3
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Quantity:
20 000
Company:
Part Number:
SS24-E3/52T
Manufacturer:
Vishay/General Semiconductor
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Part Number:
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VISHAY
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20 000
Part Number:
SS24-E3/5BT
Manufacturer:
VISHAY/威世
Quantity:
20 000
Features
Mechanical Data
Maximum Ratings and Electrical Characteristics
Rating at 25 C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
at T
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated
Load (JEDEC method )
Maximum Instantaneous Forward Voltage
(Note 1)
Maximum DC Reverse Current
Rated DC Blocking Voltage
Typical Junction Capacitance (Note 3)
Typical Thermal Resistance ( Note 2 )
Operating Temperature Range
Storage Temperature Range
Notes:
Type Number
L
(See Fig. 1)
For surface mounted application
Easy pick and place
Metal to silicon rectifier, majority carrier conduction
Low power loss, high efficiency
High current capability, low VF
High surge current capability
Plastic material used carriers Underwriters
Laboratory Classification 94V-0
Epitaxial construction
High temperature soldering:
260
Case: Molded plastic
Terminals: Pure tin plated, lead free.
Polarity: Indicated by cathode band
Packaging: 12mm tape per EIA STD RS-481
Weight: 0.093gram
o
C / 10 seconds at terminals
1. Pulse Test with PW=300 usec, 1% Duty Cycle
2. Measured on P.C.Board with 0.4” x 0.4”(10mm x 10mm) Copper Pad Areas.
3. Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
IF= 2.0A @ 25
@ 100
@ T
@ T
o
A
C
o
A
=125
C
=25
2.0 AMPS. Surface Mount Schottky Barrier Rectifiers
o
o
C
C at
Symbol SS
V
V
R
R
I
V
I
T
(AV)
FSM
RRM
V
RMS
Cj
I
T
STG
DC
R
F
J
- 40 -
22
20
14
20
-65 to +125
0.5
0.4
SS
23
30
21
30
10
Dimensions in inches and (millimeters)
.103(2.61)
.078(1.99)
SS
0.4
24
40
28
40
.083(2.10)
.077(1.95)
.056(1.41)
.035(0.90)
-65 to +150
SMB/DO-214AA
SS
25
50
35
50
0.70
0.65
130
2.0
50
17
75
SS
26
60
42
60
SS22 - SS215
-65 to +150
.187(4.75)
.167(4.25)
.209(5.30)
.201(5.10)
SS
5.0
29
90
63
90
0.85
0.70
.008(.20)
.004(.10)
.012(.31)
.006(.15)
100 150
100 150
210
SS
0.1
70
.147(3.73)
.137(3.48)
.012(.31)
.006(.15)
0.95
0.80
215
105
SS
Version: B07
Units
o
mA
mA
C/W
pF
o
o
V
V
V
A
A
V
C
C
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SS24 Summary of contents
Page 1
Features For surface mounted application Easy pick and place Metal to silicon rectifier, majority carrier conduction Low power loss, high efficiency High current capability, low VF High surge current capability Plastic material used carriers Underwriters Laboratory Classification 94V-0 Epitaxial construction ...
Page 2
... PERCENT OF RATED PEAK REVERSE VOLTAGE. (%) FIG.6- TYPICAL TRANSIENT THERMAL 100 O Tj=25 C f=1.0MHz Vsig=50mVp 0.1 100 0.01 SURGE CURRENT 8.3ms Single Half Sine Wave JEDEC Method AT RATED TL 10 NUMBER OF CYCLES AT 60Hz SS22-SS24 SS25-SS215 TJ=125 TJ= TJ= 100 120 140 CHARACTERISTICS 1 0 PULSE DURATION ...