ZXTN2010GTA Diodes Inc, ZXTN2010GTA Datasheet - Page 4

Bipolar Power 60V NPN Low Sat

ZXTN2010GTA

Manufacturer Part Number
ZXTN2010GTA
Description
Bipolar Power 60V NPN Low Sat
Manufacturer
Diodes Inc
Datasheet

Specifications of ZXTN2010GTA

Continuous Collector Current
6 A
Maximum Operating Frequency
130 MHz
Minimum Operating Temperature
- 55 C
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Package / Case
SOT-223
Collector- Emitter Voltage Vceo Max
60 V
Emitter- Base Voltage Vebo
7 V
Maximum Dc Collector Current
6 A
Power Dissipation
3 W
Maximum Operating Temperature
+ 150 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
ZXTN2010GTA
Manufacturer:
DIODES
Quantity:
10 000
Company:
Part Number:
ZXTN2010GTA
Quantity:
5 000
ELECTRICAL CHARACTERISTICS (at T
NOTES
(1) Measured under pulsed conditions. Pulse width
ZXTN2010G
PARAMETER
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter turn-on voltage
Static forward current transfer ratio
Transition frequency
Output capacitance
Switching times
S E M I C O N D U C T O R S
SYMBOL
BV
BV
BV
BV
I
I
R
I
V
V
V
H
f
C
t
t
CBO
CER
EBO
T
ON
OFF
amb
CE(SAT)
BE(SAT)
BE(ON)
FE
OBO
CBO
CER
CEO
EBO
1k
= 25°C unless otherwise stated)
300 s; duty cycle
4
MIN.
150
150
100
100
60
55
20
7
1000
TYP.
190
190
940
200
130
100
210
200
105
760
8.1
80
20
31
42
45
50
40
2%.
MAX. UNIT CONDITIONS
1100
1050
100
135
260
300
0.5
0.5
50
10
30
60
70
MHz I
mV
mV
mV
mV
mV
mV
mV
nA
nA
nA
pF
ns
V
V
V
V
A
A
I
I
I
I
V
V
V
V
V
I
I
I
I
I
I
I
I
I
I
I
f=50MHz
V
I
I
C
C
C
C
C
C
C
C
C
C
E
C
C
C
C
C
C
B1
CB
CB
CB
CB
EB
CB
=1A, I
=1A, I
=2A, I
=6A, I
=2A, V
=5A, V
=10A, V
=100 A
=100 A
=1 A, RB 1k
=10mA*
=100mA, I
=6A, I
=6A, V
=10mA, V
=100mA, V
=1A, V
=I
=120V,T
=120V,T
=6V
=120V
=120V
=10A, f=1MHz*
B2
ISSUE 2 - MAY 2006
=100mA
B
B
B
B
CE
CE
B
=100mA*
=50mA*
=50mA*
=300mA*
CE
CC
CE
=300mA*
=1V*
=1V*
=1V*
=1V*
=10V,
amb
amb
CE
B
CE
=5mA*
=1V*
=100 C
=100 C
=10V

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