SUD50N03-12P-E3 Vishay, SUD50N03-12P-E3 Datasheet

Page 1

... Surface Mounted on FR4 Board sec. Document Number: 72267 S-31875—Rev. A, 15-Sep-03 New Product a I (A) D 17.5 14 N-Channel MOSFET = 25_C UNLESS OTHERWISE NOTED) A Symbol T = 25_C 100_C 0 25_C 25_C A T Symbol sec R R Steady State R SUD50N03-12P Vishay Siliconix FEATURES D TrenchFETr Power MOSFET Limit " 175 J ...

Page 2

... SUD50N03-12P Vishay Siliconix SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) J Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current b On-State Drain Current b Drain-Source On-State Resistance Drain Source On State Resistance b Forward Transconductance a Dynamic ...

Page 3

... T - Junction Temperature (_C) J Document Number: 72267 S-31875—Rev. , 15-Sep-03 New Product 0.05 0.04 25_C 0.03 125_C 0.02 0.01 0. 100 100 125 150 175 SUD50N03-12P Vishay Siliconix On-Resistance vs. Drain Current Drain Current (A) D Gate Charge Total Gate Charge (nC) ...

Page 4

... SUD50N03-12P Vishay Siliconix THERMAL RATINGS Maximum Drain Current vs. Ambiemt Temperature 100 T - Ambient Temperature (_C Duty Cycle = 0.5 0.2 0.1 0.1 0.02 0.05 Single Pulse 0. Duty Cycle = 0.5 1 0.2 0.1 0.1 0.02 0.05 Single Pulse 0. www.vishay.com 4 New Product 1000 100 10 1 0.1 0.01 ...

Page 5

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...