SUP65P04-15-E3 Vishay, SUP65P04-15-E3 Datasheet - Page 2

• Manufacturer Part Number: SUP65P04-15-E3
• Description: MOSFET Power 40V 65A 120W
• Manufacturer: Vishay

Specifications of SUP65P04-15-E3

• Transistor Polarity: P-Channel
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.015 Ohm @ 10 V
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 65 A
• Power Dissipation: 3750 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-220AB
• Continuous Drain Current Id: -65A
• Drain Source Voltage Vds: -40V
• On Resistance Rds(on): 15mohm
• Rds(on) Test Voltage Vgs: -10V
• Power Dissipation Pd: 3.75W
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

SUP/SUB65P04-15
Vishay Siliconix
Notes:
a.
b.
c.
www.vishay.com FaxBack 408-970-5600
2-2
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Z
Zero Gate Voltage Drain Current
On-State Drain Current
D i S
Drain-Source On-State Resistance
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reversen Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Diode Ratings and Characteristics (T
Continuous Current
Pulsed Current
Forward Voltage
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
Pulse test; pulse width
Guaranteed by design, not subject to production testing.
Independent of operating temperature.
G
c
c
V l
b
O S
Parameter
a
c
D i C
c
c
c
c
a
R
i
a
300 s, duty cycle
a
a
a
Symbol
V
I
RM(REC)
V
r
r
(BR)DSS
I
DS(on)
DS(on)
t
t
I
I
I
C
2%.
GS(th)
D(on)
C
C
Q
V
Q
d(on)
d(off)
I
GSS
DSS
Q
g
Q
SM
t
I
oss
t
t
SD
iss
rss
rr
fs
gs
gd
s
r
f
g
rr
New Product
C
I
V
V
V
V
D
V
V
= 25 C)
GS
DS
GS
V
V
DS
DS
GS
= –20 V, V
= –10 V, I
= –10 V, I
–65 A, V
= –40 V, V
= –40 V, V
I
I
V
F
V
V
V
V
= 0 V, V
V
V
V
V
DS
DS
GS
20 V V
= –65 A, di/dt = 100 A/ s
DD
DD
DS
GS
I
DS
0 V V
GS
DS
Test Condition
F
= –65 A, V
= V
= –5 V, V
65 A di/d
= –4.5 V, I
= 0 V, V
= –10 V, I
= –20 V, R
b
= 0 V, I
= –40 V, V
= –15 V, I
GEN
GS
DS
D
GS
D
GS
GS
= –30 A, T
, I
= –30 A, T
= –25 V, f = 1 MHz
= –10 V, I
= –10 V, R
D
GS
,
D
= 0 V, T
= 0 V, T
GS
= –250 A
25 V f
D
GS
= –250 A
10 V I
D
D
GS
L
L
=
= –10 V
= –50 A
= –30 A
100 A/
= –20 A
= 0.3
= 0 V
= 0 V
20 V
J
J
J
J
D
= 125 C
= 175 C
G
= 125 C
= 175 C
1 MH
= –65 A
= 2.5
65 A
Min
–120
–40
–1
20
S-00831—Rev. A, 01-May-00
0.012
0.018
Typ
5400
–1.2
0.04
640
300
380
140
2.0
85
25
15
15
75
40
Document Number: 71174
Max
0.015
0.024
0.030
0.023
–250
–240
–1.5
–50
130
580
210
–65
115
0.1
–3
–1
25
80
100
4
Unit
nC
nA
pF
ns
ns
ns
V
V
A
S
A
A
V
A
C
F
C