SI7848BDP-T1-E3 Vishay, SI7848BDP-T1-E3 Datasheet

MOSFET Power 40V 47A 36W

SI7848BDP-T1-E3

Manufacturer Part Number
SI7848BDP-T1-E3
Description
MOSFET Power 40V 47A 36W
Manufacturer
Vishay
Datasheet

Specifications of SI7848BDP-T1-E3

Transistor Polarity
N-Channel
Minimum Operating Temperature
- 55 C
Configuration
Single Quad Drain Triple Source
Resistance Drain-source Rds (on)
0.009 Ohm @ 10 V
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
16 A
Power Dissipation
4200 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
PowerPAK SO
Continuous Drain Current Id
47A
Drain Source Voltage Vds
40V
On Resistance Rds(on)
12mohm
Rds(on) Test Voltage Vgs
4.5V
Threshold Voltage Vgs Typ
1V
Power Dissipation Pd
4.2W
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI7848BDP-T1-E3
Manufacturer:
NS
Quantity:
120
Company:
Part Number:
SI7848BDP-T1-E3
Quantity:
456
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
d. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
e. Maximum under Steady State conditions is 70 °C/W.
f. Based on T
Document Number: 74632
S09-0532-Rev. C, 06-Apr-09
Ordering Information: Si7848BDP-T1-E3 (Lead (Pb)-free)
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Avalanche Current
Avalanche Energy
Continuous Source-Drain Diode Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
PRODUCT SUMMARY
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
V
DS
40
(V)
8
6.15 mm
D
7
C
D
= 25 °C.
6
0.012 at V
0.009 at V
D
PowerPAK
Bottom View
Si7848BDP-T1-GE3 (Lead (Pb)-free and Halogen-free)
5
R
D
DS(on)
GS
GS
J
1
(Ω)
= 4.5 V
= 10 V
= 150 °C)
®
S
a, e
SO-8
2
S
N-Channel 40-V (D-S) MOSFET
3
S
5.15 mm
4
I
G
D
47
40
(A)
Steady State
f
c, d
t ≤ 10 s
T
T
T
T
L = 0.1 mH
T
T
T
T
T
T
C
C
A
A
C
A
C
C
A
A
A
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C, unless otherwise noted
Q
g
15 nC
(Typ.)
Symbol
R
R
thJA
thJC
Symbol
T
J
V
V
E
I
I
P
, T
DM
I
I
AS
DS
GS
AS
D
S
D
FEATURES
APPLICATIONS
stg
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• 100 % R
• Compliant to RoHS directive 2002/95/EC
• DC/DC Converters
Definition
- Synchronous Buck
- Synchronous Rectifier
Typical
2.9
25
g
and UIS Tested
®
Power MOSFET
- 55 to 150
12.8
3.5
4.2
2.7
Limit
16
± 20
260
40
47
38
50
15
11
30
36
23
a, b
a, b
a, b
a, b
a, b
Maximum
3.5
30
Vishay Siliconix
G
Si7848BDP
N-Channel MOSFET
www.vishay.com
D
S
°C/W
Unit
Unit
mJ
°C
W
V
A
A
1

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SI7848BDP-T1-E3 Summary of contents

Page 1

... Bottom View Ordering Information: Si7848BDP-T1-E3 (Lead (Pb)-free) Si7848BDP-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Avalanche Current Avalanche Energy Continuous Source-Drain Diode Current Maximum Power Dissipation Operating Junction and Storage Temperature Range ...

Page 2

... Si7848BDP Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance ...

Page 3

... On-Resistance vs. Drain Current and Gate Voltage 16 Total Gate Charge (nC) g Gate Charge Document Number: 74632 S09-0532-Rev. C, 06-Apr- 1.2 1.6 2 Si7848BDP Vishay Siliconix ° 125 ° 0.0 0.5 1.0 1.5 2.0 2 Gate-to-Source Voltage (V) GS Transfer Characteristics 2400 C 2000 iss 1600 1200 800 C oss 400 C rss ...

Page 4

... Si7848BDP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 150 ° 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 2 250 µA D 2.2 2.0 1.8 1.6 1.4 1.2 1 Temperature (°C) J Threshold Voltage www.vishay.com 4 0.030 0.025 0.020 0.015 0.010 °C J 0.005 ...

Page 5

... It is used to determine the current rating, when this rating falls below the package limit. Document Number: 74632 S09-0532-Rev. C, 06-Apr-09 100 125 150 = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper J(max) Si7848BDP Vishay Siliconix ...

Page 6

... Si7848BDP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...

Page 7

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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