2N7000-G Supertex, 2N7000-G Datasheet - Page 2

• Manufacturer Part Number: 2N7000-G
• Description: MOSFET Small Signal 60V 5Ohm
• Manufacturer: Supertex

Specifications of 2N7000-G

• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 5 Ohm @ 10 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 0.2 A
• Power Dissipation: 1000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Package / Case: TO-92
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Thermal Characteristics
Notes:
Electrical Characteristics
Switching Waveforms and Test Circuit
Notes:
OUTPUT
R
† I
BV
V
1.
2.
Sym
I
C
C
Package
t
C
INPUT
I
G
t
I
D(ON)
V
DS(ON)
(OFF)
GS(th)
GSS
DSS
(ON)
TO-92
OSS
RSS
ISS
SD
FS
D
DSS
(continuous) is limited by max rated T
All D.C. parameters 100% tested at 25
All A.C. parameters sample tested.
V
10V
0V
DD
0V
Parameter
Drain-to-source breakdown voltage
Gate threshold voltage
Gate body leakage current
Zero gate voltage drain current
On-state drain current
Static drain-to-source
on-state resistance
Forward transconductance
Input capacitance
Common source output capacitance
Reverse transfer capacitance
Turn-on time
Turn-off time
Diode forward voltage drop
10%
(continuous)
t
d(ON)
(mA)
200
I
10%
t
D
(ON)
90%
t
r
†
●
1235 Bordeaux Drive, Sunnyvale, CA 94089
(pulsed)
j
.
(mA)
500
O
C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
I
(T
D
90%
t
A
d(OFF)
= 25°C unless otherwise specified)
t
(OFF)
Power Dissipation
t
90%
F
10%
@T
C
Min
(W)
1.0
100
0.8
= 25
60
75
-
-
-
-
-
-
-
-
-
-
-
2
O
C
0.85
Typ
-
-
-
-
-
-
-
-
-
-
-
-
-
-
GENERATOR
Max
●
(
3.0
1.0
1.0
5.3
5.0
PULSE
10
60
25
10
10
O
125
5
-
-
-
-
C/W)
θ
Tel: [phone]
jc
INPUT
R
GEN
mmho
Units
mA
mA
nA
µA
pF
ns
Ω
V
V
V
(
O
170
C/W)
θ
ja
Conditions
V
V
V
V
V
T
V
V
V
V
V
f = 1.0MHz
V
R
V
●
A
GS
GS
GS
GS
GS
GS
GS
GS
DS
GS
DD
GEN
GS
= 125
www.supertex.com
= 0V, I
= V
= ±15V, V
= 0V, V
= 0V, V
= 4.5V, V
= 4.5V, I
= 10V, I
= 10V, I
= 0V, V
= 15V, I
= 0V, I
= 25Ω
DS
O
, I
C
(mA)
200
D
SD
I
DR
D
DS
DS
DS
D
D
D
= 10µA
D
= 1.0mA
= 200mA
†
DS
= 500mA
= 200mA
= 500mA,
DS
= 48V
= 48V,
= 25V,
= 75mA
V
= 10V
= 0V
DD
R
L
2N7000
D.U.T.
OUTPUT
(mA)
500
I
DRM