SI4936ADY-T1-E3 Vishay, SI4936ADY-T1-E3 Datasheet - Page 3

• Manufacturer Part Number: SI4936ADY-T1-E3
• Description: MOSFET Small Signal 30V 5.9A 2W
• Manufacturer: Vishay

Specifications of SI4936ADY-T1-E3

• Transistor Polarity: N-Channel
• Minimum Operating Temperature: - 55 C
• Configuration: Dual Dual Drain
• Resistance Drain-source Rds (on): 0.036 Ohm @ 10 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 4.4 A
• Power Dissipation: 1100 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8 Narrow
• Continuous Drain Current Id: 5.9A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 36mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 1V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 71132
S09-0869-Rev. D, 18-May-09
0.08
0.06
0.04
0.02
0.00
10
30
10
8
6
4
2
0
1
0
0
0
V
I
D
DS
Source-Drain Diode Forward Voltage
= 5.9 A
0.2
On-Resistance vs. Drain Current
= 15 V
6
3
V
SD
Q
0.4
g
V
- Source-to-Drain Voltage (V)
I
- Total Gate Charge (nC)
D
GS
- Drain Current (A)
Gate Charge
= 4.5 V
12
6
0.6
T
J
= 150 °C
0.8
18
9
T
J
= 25 °C
1.0
V
GS
24
12
= 10 V
1.2
30
15
1.4
1000
0.08
0.06
0.04
0.02
0.00
800
600
400
200
1.6
1.4
1.2
1.0
0.8
0.6
0
- 50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
V
I
D
- 25
GS
= 5.9 A
C
= 10 V
rss
6
2
V
V
T
GS
DS
0
J
- Junction Temperature (°C)
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
25
Capacitance
12
4
I
D
= 5.9 A
C
50
Vishay Siliconix
C
oss
iss
Si4936ADY
18
6
75
www.vishay.com
100
24
8
125
150
30
10
3