ZXM61P03FTA Diodes Inc, ZXM61P03FTA Datasheet - Page 6

• Manufacturer Part Number: ZXM61P03FTA
• Description: MOSFET Small Signal 30V P-Chnl HDMOS
• Manufacturer: Diodes Inc

Specifications of ZXM61P03FTA

• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.55 Ohm @ 4.5 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 1.1 A
• Power Dissipation: 806 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-23
• Continuous Drain Current Id: 1.1A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 350mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: -1V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

ISSUE 1 - OCTOBER 2005
V
G
300
250
200
150
100
Q
50
Capacitance v Drain-Source Voltage
0
GS
Basic gate charge waveform
0.1
Switching time waveforms
t
r
t
(on)
-V
t
d(off)
DS
- Drain Source Voltage (V)
Q
Q
G
GD
1
Charge
t
r
t
(on)
TYPICAL CHARACTERISTICS
10
t
d(on)
Ciss
Coss
f=1MHz
Crss
Vgs=0V
100
90%
10%
V
V
DS
GS
6
14
12
10
Switching time test circuit
8
6
4
2
0
Gate-Source Voltage v Gate Charge
Gate charge test circuit
0
ID=-0.6A
12V
0.5
R
G
1
1.5
Q -Charge (nC)
VDS=-24V
VDS=-15V
V
regulator
Current
GS
50k
I
G
2
V
GS
ZXM61P03F
2.5
R
S E M I C O N D U C T O R S
Same as
D.U.T
D
D.U.T
3
V
3.5
DS
4
I
V
D
DS
4.5
V
CC