ZVN4206AV Diodes Inc, ZVN4206AV Datasheet

MOSFET Small Signal Avalanche

ZVN4206AV

Manufacturer Part Number
ZVN4206AV
Description
MOSFET Small Signal Avalanche
Manufacturer
Diodes Inc
Datasheet

Specifications of ZVN4206AV

Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
1 Ohm @ 10 V
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
0.6 A
Power Dissipation
700 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Package / Case
E-Line
Continuous Drain Current Id
600mA
Drain Source Voltage Vds
60V
On Resistance Rds(on)
1.5ohm
Rds(on) Test Voltage Vgs
10V
Power Dissipation Pd
700mW
No. Of Pins
3
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 3 - APRIL 1998
FEATURES
*
*
*
*
*
APPLICATIONS
*
*
ABSOLUTE MAXIMUM RATINGS.
ELECTRICAL CHARACTERISTICS (at T
(1) Measured under pulsed conditions. Width=300 s. Duty cycle 2% (2) Sample test.
(3) Switching times measured with 50 source impedance and <5ns rise time on a pulse generator
PARAMETER
Drain-Source Voltage
Continuous Drain Current at T
Pulsed Drain Current
Gate-Source Voltage
Power Dissipation at T
Continuous Body Diode Current at T
=25°C
Avalanche Current – Repetitive
Avalanche Energy – Repetitive
Operating and Storage Temperature Range
PARAMETER
Drain-Source Breakdown Voltage BV
Gate-Source Threshold Voltage V
Gate-Body Leakage
Zero Gate Voltage Drain
Current
On-State Drain Current(1)
Static Drain-Source On-State
Resistance (1)
Forward Transconductance(1)(2) g
Input Capacitance (2)
Common Source Output
Capacitance (2)
Reverse Transfer Capacitance (2) C
Turn-On Delay Time (2)(3)
Rise Time (2)(3)
Turn-Off Delay Time (2)(3)
Fall Time (2)(3)
60 Volt V
R
Repetitive avalanche rating
No transient protection required
Characterised for 5V logic drive
Automotive relay drivers
Stepper motor driver
DS(on)
= 1
DS
amb
=25°C
amb
SYMBOL MIN.
I
I
I
R
C
C
t
t
t
t
GSS
DSS
D(on)
d(on)
r
d(off)
f
fs
=25°C
GS(th)
DS(on)
iss
oss
rss
DSS
amb
60
1.3
3
300
amb
SYMBOL
V
I
I
V
P
I
I
E
T
D
DM
SD
AR
tot
AR
j
DS
GS
:T
= 25°C unless otherwise stated).
MAX. UNIT CONDITIONS.
3
100
10
100
1
1.5
100
60
20
8
12
12
15
stg
V
V
nA
A
mS
pF
pF
pF
ns
ns
ns
ns
A
A
I
I
V
V
V
V
V
V
V
V
V
D
D
GS
DS
DS
DS
GS
GS
DS
DS
DD
=1mA, V
=1mA, V
-55 to +150
= 20V, V
=60V, V
=48V, V
=25V, V
=10V,I
=5V,I
=25V,I
=25V, V
VALUE
ZVN4206AV
25V, I
600
700
600
600
60
15
8
20
D
TO92 Compatible
=.0.5A
D
D
GS
DS
=1.5A
=1.5A
GS
GS
GS
GS
D
D
G
=0V
= V
=1.5A,V
DS
=0
=0V, T=125°C
=10V
=0V, f=1MHz
S
E-Line
=0V
GS
GEN
UNIT
mW
mA
mA
mA
mJ
°C
V
A
V
=10V
(2)

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ZVN4206AV Summary of contents

Page 1

... V GS(th) I 100 nA GSS I 10 DSS 100 D(on DS(on) 1.5 300 100 pF iss oss 20 pF rss d(on d(off ZVN4206AV E-Line TO92 Compatible VALUE UNIT 60 600 8 20 700 mW 600 600 15 -55 to +150 I =1mA =1mA 20V =60V =48V, V =0V, T=125° =25V, V =10V ...

Page 2

... Normalised R Normalised R ZVN4206AV Drain Source Voltage (Volts) - Drain Source Voltage (Volts 10V 10V DS= DS Gate Source Voltage (Volts) Gate Source Voltage (Volts) GS- ...

Page 3

... ZVN4206AV TYPICAL CHARACTERISTICS 1000 900 800 700 600 V 10V DS= 500 400 300 200 100 Drain Current (Amps) D Transconductance v drain current 200 160 120 -Drain Source Voltage (Volts) DS Capacitance v drain-source voltage T - Junction Temperature (°C) j Maximum repetative avalanche energy v Junction Temperature 1000 900 ...

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