ZXMN3A02N8TA Diodes Inc, ZXMN3A02N8TA Datasheet

MOSFET Small Signal 30V N Chnl UMOS

ZXMN3A02N8TA

Manufacturer Part Number
ZXMN3A02N8TA
Description
MOSFET Small Signal 30V N Chnl UMOS
Manufacturer
Diodes Inc
Datasheet
1.ZXMN3A02N8TA.pdf (7 pages)

Specifications of ZXMN3A02N8TA

Minimum Operating Temperature
- 55 C
Configuration
Single Quad Drain Triple Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.025 Ohm @ 10 V
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
9 A
Power Dissipation
2500 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOIC-8
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Meier Automation Equipment Co., Limited Meier Automation Equipment Co., Limited
Part Number:
ZXMN3A02N8TA
Manufacturer:
ZETEX
Quantity:
20 000
30V N-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
V
DESCRIPTION
This new generation of TRENCH MOSFETs from Zetex utilizes a unique
structure that combines the benefits of low on-resistance with fast switching
speed. This makes them ideal for high efficiency, low voltage, power
management applications.
FEATURES
•
•
•
•
•
APPLICATIONS
•
•
ORDERING INFORMATION
DEVICE MARKING
•
ISSUE 4 - JANUARY 2005
DEVICE
ZXMN3A02N8TA
ZXMN3A02N8TC
(BR)DSS
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
Low profile SOIC package
Disconnect switches
Motor control
ZXMN
3A02
= 30V; R
DS(ON)
REEL
SIZE
13”
7”
= 0.025
WIDTH
12mm
12mm
TAPE
I
QUANTITY
D
2500 units
PER REEL
500 units
= 9.0A
1
PINOUT
ZXMN3A02N8
S E M I C O N D U C T O R S
Top View
SO8

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ZXMN3A02N8TA Summary of contents

Page 1

... Low gate drive • Low profile SOIC package APPLICATIONS • Disconnect switches • Motor control ORDERING INFORMATION DEVICE REEL TAPE SIZE WIDTH ZXMN3A02N8TA 7” 12mm ZXMN3A02N8TC 13” 12mm DEVICE MARKING • ZXMN 3A02 ISSUE 4 - JANUARY 2005 I = 9.0A D QUANTITY PER REEL ...

Page 2

ZXMN3A02N8 ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Gate Source Voltage Continuous Drain Current V =-10V =-10V =-10V Pulsed Drain Current (c) Continuous Source Current (Body Diode) (b) Pulsed Source Current (Body Diode) ...

Page 3

ISSUE 4 - JANUARY 2005 CHARACTERISTICS 3 ZXMN3A02N8 ...

Page 4

ZXMN3A02N8 ELECTRICAL CHARACTERISTICS (at T PARAMETER STATIC Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Source Threshold Voltage Static Drain-Source On-State Resistance (1) Forward Transconductance (1)(3) DYNAMIC (3) Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING(2) (3) Turn-On ...

Page 5

ISSUE 4 - JANUARY 2005 CHARACTERISTICS 5 ZXMN3A02N8 ...

Page 6

ZXMN3A02N8 CHARACTERISTICS 6 ISSUE 4 - JANUARY 2005 ...

Page 7

PACKAGE OUTLINE D Pin 1 Seating Plane Seating Plane e b CONTROLLING DIMENSIONS ARE IN INCHES APPROX IN MILLIMETRES © Zetex Semiconductors plc 2005 Europe Americas Zetex GmbH Zetex Inc Streitfeldstraße 19 700 Veterans Memorial Hwy D-81673 München Hauppauge, NY ...

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