VN10KN3-G Supertex, VN10KN3-G Datasheet - Page 3

• Manufacturer Part Number: VN10KN3-G
• Description: MOSFET Small Signal 60V 5Ohm
• Manufacturer: Supertex

Specifications of VN10KN3-G

• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 5 Ohm @ 10 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 0.31 A
• Power Dissipation: 1000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Package / Case: TO-92
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Performance Curves
0.01
250
200
150
100
1.0
0.8
0.6
0.4
0.2
1.0
0.1
50
10
0
0
0
0
1
Maximum Rated Safe Operating Area
Transconductance vs. Drain Current
TO-92 (DC)
200
10
Output Characteristics
10
400
V
V
20
DS
DS
I
D
(volts)
(volts)
(mA)
V GS =10V
●
600
30
1235 Bordeaux Drive, Sunnyvale, CA 94089
V
300µs, 2%
Duty Cycle
Pulse Test
100
DS
T C = 25°C
6V
5V
4V
3V
2V
= 10V
800
40
1000
1000
50
3
1.0
0.8
0.6
0.4
0.2
10
15
10
0
2
1
0
5
0
5
0
0
0
0
●
Power Dissipation vs. Case Temperature
Tel: [phone]
TO-92
V GS =10V
25
10
2
Saturation Characteristics
8V
Switching Waveform
9V
50
V
t – Time (ns)
20
4
DS
T
C
(volts)
75
(°C)
●
www.supertex.com
30
6
100
7V
6V
5V
4V
3V
2V
40
8
125
150
50
10
VN10K