VN2110K1-G Supertex, VN2110K1-G Datasheet

VN2110K1-G

Manufacturer Part Number

VN2110K1-G

Description

MOSFET Small Signal 100V 4Ohm

Manufacturer

Supertex

Type

Power MOSFETr

Datasheet

1.VN2106N3-G.pdf (5 pages)

Specifications of VN2110K1-G

Minimum Operating Temperature

- 55 C

Configuration

Single

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

4 Ohm @ 10 V

Drain-source Breakdown Voltage

100 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

0.2 A

Power Dissipation

360 mW

Maximum Operating Temperature

+ 150 C

Mounting Style

SMD/SMT

Package / Case

SOT-23

Number Of Elements

Polarity

Channel Mode

Enhancement

Drain-source On-res

4Ohm

Drain-source On-volt

100V

Gate-source Voltage (max)

±20V

Operating Temp Range

-55C to 150C

Operating Temperature Classification

Military

Mounting

Surface Mount

Pin Count

Package Type

SOT-23

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

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Features

►

Applications

►

-G indicates package is RoHS compliant (‘Green’)

Absolute Maximum Ratings

Absolute Maximum Ratings are those values beyond which damage to

the device may occur. Functional operation under these conditions is not

implied. Continuous operation of the device at the absolute rating level

may affect device reliability. All voltages are referenced to device ground.

Ordering Information

Parameter

Drain-to-Source voltage

Drain-to-Gate voltage

Gate-to-Source voltage

Operating and storage temperature

Soldering temperature*

Distance of 1.6mm from case for 10 seconds.

Free from secondary breakdown

Low power drive requirement

Ease of paralleling

Low C

High input impedance and high gain

Motor controls

Converters

Ampliﬁers

Switches

Power supply circuits

Drivers (relays, hammers, solenoids, lamps,

memories, displays, bipolar transistors, etc.)

VN2106

Device

ISS

and fast switching speeds

Package Option

VN2106N3-G

TO-92

●

N-Channel Enhancement-Mode

Vertical DMOS FETs

1235 Bordeaux Drive, Sunnyvale, CA 94089

-55°C to +150°C

+300°C

DSS

Value

±20V

(V)

/BV

DGS

DSS

DGS

General Description

The Supertex VN2106 is an enhancement-mode (normally-

off) transistor that utilizes a vertical DMOS structure

and Supertex’s well-proven silicon-gate manufacturing

process. This combination produces a device with the

power handling capabilities of bipolar transistors, and the

high input impedance and positive temperature coefﬁcient

inherent in MOS devices. Characteristic of all MOS

structures, this device is free from thermal runaway and

thermally-induced secondary breakdown.

Supertex’s vertical DMOS FETs are ideally suited to a

wide range of switching and amplifying applications where

very low threshold voltage, high breakdown voltage, high

input impedance, low input capacitance, and fast switching

speeds are desired.

Pin Conﬁguration

Product Marking

Package may or may not include the following marks: Si or

Y Y W W

2 1 0 6

●

SiVN

(max)

4.0

DS(ON)

(Ω)

Tel: 408-222-8888

YY = Year Sealed

WW = Week Sealed

SOURCE

TO-92 (N3)

●

= “Green” Packaging

www.supertex.com

DRAIN

GATE

VN2106

Related parts for VN2110K1-G

VN2110K1-G Summary of contents

Page 1

... MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired ...

Page 2

... Max Rating, 100 0V 125 10V 6 5.0V Ω 4 10V 500mA 10V 500mA mmho V = 25V 500mA 0V 25V 1.0MHz 5.0 5 25V, 8 600mA 25Ω GEN 8 600mA 0V 600mA PULSE OUTPUT R GEN D.U.T. INPUT ● Tel: 408-222-8888 ● www.supertex.com VN2106 I DRM (A) 1 25V = 75mA ...

Page 3

... Bordeaux Drive, Sunnyvale, CA 94089 3 Saturation Characteristics 2 1.6 1.2 0.8 0 (volts) DS Power Dissipation vs. Case Temperature 2.0 TO-92 1 100 125 T (°C) C Thermal Response Characteristics 1.0 0.8 0.6 0.4 TO-92 0 25° 0.001 0.01 0.1 1.0 t (seconds) p ● Tel: 408-222-8888 ● www.supertex.com VN2106 10V 150 10 ...

Page 4

... R Variation with Temperature GS(th) DS(ON) 1 10V, 0.5A DS(ON) 1.2 1 1mA GS(th) 0.8 0.6 - 100 T (°C) j Gate Drive Dynamic Characteristics 10V 40V 0.6 0 0.2 0.4 0.8 Q (nanocoulombs) G ● Tel: 408-222-8888 ● www.supertex.com VN2106 2.5 2.0 1.6 1.2 0.8 0.4 0 150 1.0 ...

Page 5

... Supertex inc. does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives an adequate “product liability indemnification insurance agreement.” Supertex inc. does not assume responsibility for use of devices described, and limits its liability to the replacement of the devices determined defective due to workmanship ...

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