DG211BDY-E3 Vishay, DG211BDY-E3 Datasheet - Page 2

• Manufacturer Part Number: DG211BDY-E3
• Description: Analog Switch ICs Quad SPST Switch
• Manufacturer: Vishay
• Type: Analog Switchr

Specifications of DG211BDY-E3

• Number Of Switches: Quad
• Switch Configuration: SPST
• On Resistance (max): 160 Ohms
• On Time (max): 300 ns
• Off Time (max): 200 ns
• Supply Voltage (max): 25 V
• Supply Voltage (min): 4.5 V
• Maximum Power Dissipation: 640 mW
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-16 Narrow
• Minimum Operating Temperature: - 40 C
• Analogue Switch Type: SPST
• No. Of Channels: 4
• On State Resistance Max: 85ohm
• Turn Off Time: 200ns
• Turn On Time: 300ns
• Supply Voltage Range: 4.5V To 25V
• Operating Temperature Range: -40°C To +85°C
• Multiplexer Configuration: Quad SPST
• Number Of Inputs: 4
• Number Of Outputs: 4
• Number Of Channels: 4
• Analog Switch On Resistance: 160@12VOhm
• Package Type: SOIC N
• Power Supply Requirement: Single/Dual
• Single Supply Voltage (min): 4.5V
• Single Supply Voltage (typ): 5/9/12/15/18/24V
• Single Supply Voltage (max): 25V
• Dual Supply Voltage (min): ±4.5V
• Dual Supply Voltage (typ): ±5/±9/±12/±15V
• Dual Supply Voltage (max): ±22V
• Power Dissipation: 640mW
• Mounting: Surface Mount
• Pin Count: 16
• Operating Temp Range: -40C to 85C
• Operating Temperature Classification: Industrial
• Package: 16SOIC N
• Maximum On Resistance: 160@12V Ohm
• Maximum High Level Output Current: 100 mA
• Maximum Turn-off Time: 200@±15V ns
• Maximum Turn-on Time: 300@±15V ns
• Switch Architecture: SPST
• Power Supply Type: Single|Dual
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

DG211B/212B
Vishay Siliconix
Voltages Referenced to V–
V+
GND
Digital Inputs
Current, Any Terminal
Peak Current, S or D
(Pulsed at 1 ms, 10% duty cycle max)
Storage Temperature
www.vishay.com FaxBack 408-970-5600
4-2
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. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
GND
IN
V+
V–
V
X
L
a
V
S
, V
D
. . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Temp Range
. . . . . . . . . . . . . . . . . . . . . . . . .
–40 to 85 C
–40 to 85 C
40
40
or 30 mA, whichever occurs first
85 C
85 C
(V–) –2 V to (V+) +2 V
–65 to 125 C
100 mA
30 mA
16-Pin Narrow SOIC
16-Pin Narrow SOIC
16-Pin Plastic DIP
16-Pin Plastic DIP
44 V
25 V
16-Pin TSSOP
16-Pin TSSOP
FIGURE 1.
Package
Level
Shift/
Drive
Power Dissipation (Package)b
16-Pin Plastic DIP
16-Pin Narrow SOIC and TSSOP
Notes:
a.
b.
c.
d.
Signals on S
diodes. Limit forward diode current to maximum current ratings.
All leads welded or soldered to PC Board.
Derate 6.5 mW/ C above 75 C
Derate 7.6 mW/ C above 75 C
X
DG211BDJ
DG212BDJ
DG211BDY
DG212BDY
DG211BDQ
DG212BDQ
c
, D
Part Number
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
X
, or IN
X
exceeding V+ or V– will be clamped by internal
d
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
S-00788—Rev. H, 24-Apr-00
Document Number: 70040
V–
V+
S
D
470 mW
640 mW
X
X