Replacement Semiconductors TO-92 PNP AUDIO AMP

NTE294

Manufacturer Part NumberNTE294
DescriptionReplacement Semiconductors TO-92 PNP AUDIO AMP
ManufacturerNTE ELECTRONICS
NTE294 datasheet
 

Specifications of NTE294

Transistor PolarityPNPCollector Emitter Voltage V(br)ceo50V
Transition Frequency Typ Ft200MHzPower Dissipation Pd1W
Dc Collector Current-1ADc Current Gain Hfe120
Lead Free Status / RoHS StatusLead free / RoHS Compliant  
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NTE293 (NPN) & NTE294 (PNP)
Silicon Complementary Transistors
Description:
The NTE293 (NPN) and NTE294 (PNP) are silicon complementary transistors in a Giant TO92 type
package designed for use in low–frequency power amplification and drive applications.
Features:
D Low Collector–Emitter Saturation Voltage
Absolute Maximum Ratings: (T
Collector–Base Voltage, V
CBO
Collector–Emitter Voltage, V
Emitter–Base Voltage, V
EBO
Collector Current, I
C
Continuous
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Power Dissipation, P
Operating Junction Temperature, T
Storage Temperature Range, T
Electrical Characteristics: (T
Parameter
Collector–Base Breakdown Voltage
Collector–Emitter Breakdown Voltage
Emitter–Base Breakdown Voltage
Collector Cutoff Current
DC Current Gain
Collector–Emitter Saturation Voltage
Base–Emitter Saturation Voltage
Current–Gain Bandwidth Product
Collector Output Capacitance
Note 1. NTE293MP is a matched pair of NTE293 with their DC Current Gain (h
10% of each other.
Note 2. Pulse measurement.
Audio Amplifier and Driver
= +25 C unless otherwise specified)
A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
stg
= +25 C unless otherwise specified)
A
Symbol
Test Conditions
V
I
= 10 A, I
= 0
(BR)CBO
C
E
V
I
= 2mA, I
= 0
(BR)CEO
C
B
V
I
= 10 A, I
= 0
(BR)EBO
E
C
I
V
= 20V, I
= 0
CBO
CB
E
h
V
= 10V, I
FE
CE
C
V
= 5V, I
= 1A, Note 2
CE
B
V
I
= 500mA, I
CE(sat)
C
B
V
I
= 500mA, I
BE(sat)
C
B
f
V
= 10V, I
= 50mA, f = 200MHz
T
CB
E
C
V
= 10V, I
= 0, f = 1MHz
ob
CB
e
Min
Typ
60
50
5
= 500mA, Note 2
120
50
100
= 50mA, Note 2
0.2
= 50mA, Note 2
0.85
200
11
) matched to within
FE
60V
50V
5V
1A
1.5A
1W
+150 C
–55 to +150 C
Max
Unit
V
V
V
0.1
A
240
0.4
V
1.2
V
MHz
20
pF

NTE294 Summary of contents

  • Page 1

    ... NTE293 (NPN) & NTE294 (PNP) Silicon Complementary Transistors Description: The NTE293 (NPN) and NTE294 (PNP) are silicon complementary transistors in a Giant TO92 type package designed for use in low–frequency power amplification and drive applications. Features: D Low Collector–Emitter Saturation Voltage Absolute Maximum Ratings: (T Collector– ...

  • Page 2

    Max .512 (13.0) Min .100 (2.54) .240 (6.09) Max Seating Plane .026 (.66) Dia Max .200 (5.08) Max ...