NTE294 NTE ELECTRONICS, NTE294 Datasheet

Replacement Semiconductors TO-92 PNP AUDIO AMP

NTE294

Manufacturer Part Number
NTE294
Description
Replacement Semiconductors TO-92 PNP AUDIO AMP
Manufacturer
NTE ELECTRONICS
Datasheet

Specifications of NTE294

Transistor Polarity
PNP
Collector Emitter Voltage V(br)ceo
50V
Transition Frequency Typ Ft
200MHz
Power Dissipation Pd
1W
Dc Collector Current
-1A
Dc Current Gain Hfe
120
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Description:
The NTE293 (NPN) and NTE294 (PNP) are silicon complementary transistors in a Giant TO92 type
package designed for use in low–frequency power amplification and drive applications.
Features:
D Low Collector–Emitter Saturation Voltage
Absolute Maximum Ratings: (T
Collector–Base Voltage, V
Collector–Emitter Voltage, V
Emitter–Base Voltage, V
Collector Current, I
Collector Power Dissipation, P
Operating Junction Temperature, T
Storage Temperature Range, T
Electrical Characteristics: (T
Note 1. NTE293MP is a matched pair of NTE293 with their DC Current Gain (h
Note 2. Pulse measurement.
Collector–Base Breakdown Voltage
Collector–Emitter Breakdown Voltage
Emitter–Base Breakdown Voltage
Collector Cutoff Current
DC Current Gain
Collector–Emitter Saturation Voltage
Base–Emitter Saturation Voltage
Current–Gain Bandwidth Product
Collector Output Capacitance
Continuous
Peak
10% of each other.
Parameter
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Silicon Complementary Transistors
EBO
CBO
NTE293 (NPN) & NTE294 (PNP)
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Audio Amplifier and Driver
C
stg
A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25 C unless otherwise specified)
A
V
V
V
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Symbol
V
V
= +25 C unless otherwise specified)
(BR)CBO
(BR)CEO
(BR)EBO
I
CE(sat)
BE(sat)
C
CBO
h
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
f
FE
T
ob
I
I
I
V
V
V
I
I
V
V
C
C
E
C
C
CB
CB
CE
CE
CB
= 10 A, I
= 10 A, I
= 2mA, I
= 500mA, I
= 500mA, I
= 10V, I
= 20V, I
= 10V, I
= 5V, I
= 10V, I
Test Conditions
B
B
E
C
E
E
C
e
= 0
= 1A, Note 2
= 0
= 0
B
B
= 0, f = 1MHz
= 50mA, f = 200MHz
= 0
= 500mA, Note 2
= 50mA, Note 2
= 50mA, Note 2
Min
120
60
50
50
5
FE
) matched to within
0.85
Typ
100
200
0.2
11
–55 to +150 C
Max
240
0.1
0.4
1.2
20
+150 C
Unit
MHz
1.5A
pF
V
V
V
V
V
60V
50V
A
1W
5V
1A

Related parts for NTE294

NTE294 Summary of contents

Page 1

... NTE293 (NPN) & NTE294 (PNP) Silicon Complementary Transistors Description: The NTE293 (NPN) and NTE294 (PNP) are silicon complementary transistors in a Giant TO92 type package designed for use in low–frequency power amplification and drive applications. Features: D Low Collector–Emitter Saturation Voltage Absolute Maximum Ratings: (T Collector– ...

Page 2

Max .512 (13.0) Min .100 (2.54) .240 (6.09) Max Seating Plane .026 (.66) Dia Max .200 (5.08) Max ...

Related keywords