NTE2987 NTE ELECTRONICS, NTE2987 Datasheet

Replacement Semiconductors TO-220 N-CH 100V 20A

NTE2987

Manufacturer Part Number
NTE2987
Description
Replacement Semiconductors TO-220 N-CH 100V 20A
Manufacturer
NTE ELECTRONICS
Datasheet

Specifications of NTE2987

Power Dissipation Pd
105W
No. Of Pins
3
Leakage Current
10µA
Termination Type
Through Hole
Mounting Type
Through Hole
No. Of Channels
1
Package / Case
3-TO-220
Output Current Max
20A
Filter Terminals
Through Hole
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Features:
D Avalanche Rugged Technology
D Logic Level Gate Drive
D R
D +175 C Operating Temperature
D Fast Switching
D Low Gate Charge
D High Current Capability
Absolute Maximum Ratings:
Drain Current, I
Total Power Dissipation (T
Gate–Source Voltage, V
Avalanche Current, Repetitive or Non–Repetitive (Note 2), I
Single Pulsed Avalanche Energy (Note 3), E
Repetitive Avalanche Energy (Note 2), E
Avalanche Current, Repetitive or Non–Repetitive (Note 4), I
Drain–Source Voltage (V
Drain–Gate Voltage (R
Operating Junction Temperature, T
Storage Temperature Range, T
Maximum Lead Temperature (During Soldering, 1.6mm from case, 10sec), T
Thermal Resistance:
Note 1. Pulse width limited by safe operating area.
Note 2. Pulse width limited by T
Note 3. V
Note 4. T
DS
Continuous
Pulsed (Note 1)
Derate Above 25 C
Maximum Junction–to–Case, R
Typical Case–to–Sink (Mounting surface flat, smooth, and greased), R
Maximum Junction–to–Ambient (Free Air Operation), R
(on) = 0.09
T
T
C
DD
C
C
= +100 C, Pulse width limited by T
= +25 C
= +100 C
= 25V, I
D
Typ. at V
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
GS
= I
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
GS
GS
AR
= 20k ), V
N–Channel, Enhancement Mode
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 0), V
= +25 C), P
, Starting T
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
GS
stg
J
= 5V
max, Duty Cycle < 1%.
Logic Level MOSFET
DS
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
High Speed Switch
DGR
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
thJC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
J
D
AR
= +175 C.
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE2987
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
AS
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
max, Duty Cycle < 1%.
AR
AR
thJA
. . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . .
L
thCS
. . . . . . . . . .
. . . . . .
–65 to +175 C
1.43 C/W
62.5 C/W
0.7W/ C
0.5 C/W
+175 C
+300 C
120mJ
105W
30mJ
100V
100V
20A
14A
80A
15V
20A
14A

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NTE2987 Summary of contents

Page 1

... Typical Case–to–Sink (Mounting surface flat, smooth, and greased), R Maximum Junction–to–Ambient (Free Air Operation), R Note 1. Pulse width limited by safe operating area. Note 2. Pulse width limited by T Note 25V Note +100 C, Pulse width limited NTE2987 Logic Level MOSFET High Speed Switch = +25 C 0), V ...

Page 2

Electrical Characteristics: (T Parameter OFF Drain–Source Breakdown Voltage Drain–to–Source Leakage Current Gate–Source Leakage Forward Gate–Source Leakage Reverse ON (Note 5) Gate Threshold Voltage Static Drain–Source ON Resistance On–State Drain Current Dynamic Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance ...

Page 3

Max .147 (3.75) Dia Max .070 (1.78) Max Gate .100 (2.54) .110 (2.79) .500 (12.7) Max .250 (6.35) Max .500 (12.7) Min Source Drain/Tab ...

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