Features:
D Avalanche Rugged Technology
D Logic Level Gate Drive
D R
D +175 C Operating Temperature
D Fast Switching
D Low Gate Charge
D High Current Capability
Absolute Maximum Ratings:
Drain Current, I
Total Power Dissipation (T
Gate–Source Voltage, V
Avalanche Current, Repetitive or Non–Repetitive (Note 2), I
Single Pulsed Avalanche Energy (Note 3), E
Repetitive Avalanche Energy (Note 2), E
Avalanche Current, Repetitive or Non–Repetitive (Note 4), I
Drain–Source Voltage (V
Drain–Gate Voltage (R
Operating Junction Temperature, T
Storage Temperature Range, T
Maximum Lead Temperature (During Soldering, 1.6mm from case, 10sec), T
Thermal Resistance:
Note 1. Pulse width limited by safe operating area.
Note 2. Pulse width limited by T
Note 3. V
Note 4. T
DS
Continuous
Pulsed (Note 1)
Derate Above 25 C
Maximum Junction–to–Case, R
Typical Case–to–Sink (Mounting surface flat, smooth, and greased), R
Maximum Junction–to–Ambient (Free Air Operation), R
(on) = 0.09
T
T
C
DD
C
C
= +100 C, Pulse width limited by T
= +25 C
= +100 C
= 25V, I
D
Typ. at V
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
GS
= I
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
GS
GS
AR
= 20k ), V
N–Channel, Enhancement Mode
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 0), V
= +25 C), P
, Starting T
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
GS
stg
J
= 5V
max, Duty Cycle < 1%.
Logic Level MOSFET
DS
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
High Speed Switch
DGR
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
thJC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
J
D
AR
= +175 C.
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE2987
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
AS
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
max, Duty Cycle < 1%.
AR
AR
thJA
. . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . .
L
thCS
. . . . . . . . . .
. . . . . .
–65 to +175 C
1.43 C/W
62.5 C/W
0.7W/ C
0.5 C/W
+175 C
+300 C
120mJ
105W
30mJ
100V
100V
20A
14A
80A
15V
20A
14A