2952790 Phoenix Contact, 2952790 Datasheet - Page 2

• Manufacturer Part Number: 2952790
• Description: DIODE MODULE 4 DIODES 1N5408
• Manufacturer: Phoenix Contact
• Type: Diode Moduler

Specifications of 2952790

• Diode Type: Standard
• Current - Average Rectified (io) (per Diode): 1A
• Voltage - Dc Reverse (vr) (max): 1000V (1kV)
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Diode Configuration: 4 Independent
• Mounting Type: DIN Rail/Channel
• Package / Case: Module
• Product: DIN Rail Terminal Blocks
• Wire Gauge Range: 24-12
• Current Rating: 1.5 A
• Voltage Rating: 250 VAC
• Termination Style: Screw
• Operating Temperature Range: - 20 C to + 50 C
• Wire Gauge Max (awg): 12
• Wire Gauge Min (awg): 24
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Voltage - Forward (vf) (max) @ If: -
• Current - Reverse Leakage @ Vr: -
• Reverse Recovery Time (trr): -
• Lead Free Status / Rohs Status: Details
• Other names: EMG 22-DIO 4E-1N5408

EMG 22-DIO 4E-1N5408
http://eshop.phoenixcontact.de/phoenix/treeViewClick.do?UID=2952790
PHOENIX CONTACT Deutschland GmbH
http://www.phoenixcontact.de
Conducting state voltage per diode
Conducting state current per diode
Width
Height
Depth
Ambient temperature (operation)
Ambient temperature (storage/transport)
Surge voltage category
Mounting position
Assembly instructions
Connection data
Conductor cross section solid min.
Conductor cross section solid max.
Conductor cross section stranded min.
Conductor cross section stranded max.
Conductor cross section AWG/kcmil min.
Conductor cross section AWG/kcmil max
Stripping length
Screw thread
Type of connection
Certificates / Approvals
Certification
Accessories
Item
Marking
2947035
Designation
EMG-GKS 12
Order No.: 2952790
Description
Equipment marker, width 12 mm
Approx. 0.8 V
1.5 A (with single load)
1 A (with simultaneous loads)
22.5 mm
75 mm
55 mm
-20 °C ... 50 °C
-40 °C ... 70 °C
III, basic insulation (as per EN 50178)
Any
In rows with zero spacing
0.2 mm²
4 mm²
0.2 mm²
2.5 mm²
24
12
8 mm
M3
Screw connection
GOST
Feb 3, 2011
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