SCS108AGC Rohm Semiconductor, SCS108AGC Datasheet

DIODE SCHOTTKY 600V 8A TO220AC

SCS108AGC

Manufacturer Part Number
SCS108AGC
Description
DIODE SCHOTTKY 600V 8A TO220AC
Manufacturer
Rohm Semiconductor
Datasheets

Specifications of SCS108AGC

Diode Type
Silicon Carbide Schottky
Voltage - Dc Reverse (vr) (max)
600V
Current - Average Rectified (io)
8A
Speed
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)
0ns
Mounting Type
*
Package / Case
*
Product
Schottky Diodes
Peak Reverse Voltage
600 V
Forward Continuous Current
8 A
Max Surge Current
32 A
Configuration
Single
Forward Voltage Drop
1.5 V, 1.6 V
Maximum Reverse Leakage Current
160 uA
Maximum Power Dissipation
52 W
Mounting Style
Through Hole
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Voltage - Forward (vf) (max) @ If
-
Current - Reverse Leakage @ Vr
-
Capacitance @ Vr, F
-
Lead Free Status / Rohs Status
 Details
SCS108AG | SiC Schottky Barrier Diodes | Discrete Semiconductors | ROHM CO., LTD.
http://www.rohm.com/products/discrete/sic/sic_schottky_barrier/scs108ag/print.html
[ Product description ]
Switching loss reduced, enabling high-speed switching . (2-pin package)
• Shorter recovery time
• Reduced temperature dependence
• High-speed switching possible
Copyright © 1997-2011 ROHM CO.,LTD.
Repetitive peak reverse voltage V
Reverse voltage(DC) V
Average rectified forward current I
Forward current surge peak I
Junction temperature Tj(ºC)
Storage temperature Tstg(ºC)
SiC Schottky Barrier Diodes
SCS108AG
Features
Product specifications
Rated parameters
Absolute maximum ratings (Ta=25ºC)
R
(V)
FSM
(A)
RM
O
(A)
(V)
Standard value
-55 to +150
600
600
150
32 60Hz/1cyc
8
*The contents described here are just outline for introduction.
Please obtain the specification sheets from us for thorough check before use.
Conditions
Outline
9.8x15.4(t=4.4)
Dimensions
Equivalent circuit
diagram
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2/16/2011

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