SCS110AGC Rohm Semiconductor, SCS110AGC Datasheet

SCS110AGC

Manufacturer Part Number

SCS110AGC

Description

DIODE SCHOTTKY 600V 10A TO220AC

Manufacturer

Rohm Semiconductor

Datasheets

1.SCS110AGC.pdf (1 pages)

2.SCS110AGC.pdf (1 pages)

3.SCS110AGC.pdf (4 pages)

Specifications of SCS110AGC

Diode Type

Silicon Carbide Schottky

Voltage - Dc Reverse (vr) (max)

600V

Current - Average Rectified (io)

10A

Speed

No Recovery Time > 500mA (Io)

Reverse Recovery Time (trr)

0ns

Mounting Type

Package / Case

Product

Schottky Diodes

Peak Reverse Voltage

600 V

Forward Continuous Current

10 A

Max Surge Current

40 A

Configuration

Single

Forward Voltage Drop

1.5 V, 1.6 V

Maximum Reverse Leakage Current

200 uA

Maximum Power Dissipation

57 W

Mounting Style

Through Hole

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Voltage - Forward (vf) (max) @ If

Current - Reverse Leakage @ Vr

Capacitance @ Vr, F

Lead Free Status / Rohs Status

Details

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Meier Automation Equipment Co., Limited

Part Number:

SCS110AGC

Manufacturer:

ROHM/罗姆

Quantity:

20 000

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Specifications

Ultra-short reverse recovery

time (impossible to achieve

with silicon) enables

high-speed switching. This

minimizes the reverse

recovery charge (Qrr),

reducing switching loss

significantly, contributing to

end-product miniaturization.

In addition, SiC devices

maintain a constant trr

regardless of temperature,

unlike conventional silicon

fast recovery diodes where

the trr increases with

temperature. This enables

high-temperature driving

without increasing

switching loss.

Dramatically lower switching loss

SCS110AX

SCS110AG

Part No.

SCS110AG

2pin

SiC wafer supplier SiCrystal has joined the ROHM Group. This

makes it possible to perform manufacturin g completely

in-house, from ingot formation to power device fabrication,

resulting in cutting-edge products with superior reliability and

quality.

Package

3-pin

2-pin

100

-2

-4

-6

600

(V)

Conditions

di/dt= -350A/ sec

=10A

trr Temperature Characteristics

SiC SBD

Q r r

Switching Waveforms

inreases with temperature

600

(V)

SiC is largely temp.-independent

Time (nsec)

trr difference

Ta (˚C)

100

A smaller area means

Si FRD

lower loss

Io (A)

Si FRD

The content specified in this document is correct as of 23th. Apr.2010.

SiC SBD

FSM

(A)

100

200

SCS110AX

Tj (˚C)

150

3pin

53X6308E 05.2010

Applications

-55 to +150

SiC diodes exhibit stabler

temperature characteristics

(i.e. forward voltage)

compared with

silicon-based devices,

simplifying parallel

connection(s) and

preventing thermal runaway

- unlike Si FRDs.

Stable temperature characteristics

• Switching circuits

• Motor drive circuits

• PFC (Power Factor Correction) circuits and others

Tstg (˚C)

Circuit Example

SiC Schottky barrier diodes have are now available for high

voltage resistance, large current circuits. High-speed switching

characteristics minimize switching loss, improving device operating

frequency.

typ.

1.5

(V)

PFC Circuit:

Boost voltage + DC

(A)

typ.

(µA)

SiC

Schottky

Barrier

Diodes

SBD: Forward Characteristics

600

0.5

FORWARD VO LTAGE : V

(V)

SiC SBD

trr (nsec)

typ.

25˚C

Main Circuit:

SW Power Supply

(V)

di/dt=-350A/µsec

=10A

Conditions

=400V

1.5

Ene rgy

Sa ving

125˚C

75˚C

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