AUIRLR3410 International Rectifier, AUIRLR3410 Datasheet - Page 2

• Manufacturer Part Number: AUIRLR3410
• Description: MOSFET N-CH 100V 17A DPAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of AUIRLR3410

• Input Capacitance (ciss) @ Vds: 800pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 105 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 17A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 34nC @ 5V
• Power - Max: 79W
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 155 mOhms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 16 V
• Continuous Drain Current: 17 A
• Power Dissipation: 79 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 22.7 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Notes:

‚
ƒ
„
…
AUIRLR3410
Static Electrical Characteristics @ T
V
∆V
R
V
gfs
I
I
Dynamic Electrical Characteristics @ T
Q
Q
Q
t
t
t
t
L
L
C
C
C
I
I
V
t
Q
t
Diode Characteristics
DSS
GSS
d(on)
r
d(off)
f
S
SM
rr
on
D
S
(BR)DSS
GS(th)
SD
DS(on)
iss
oss
rss
g
gs
gd
rr
Repetitive rating; pulse width limited by
V
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Uses IRL530N data and test conditions.
2
I
max. junction temperature. ( See fig.11 )
R
SD
(BR)DSS
DD
G
≤ 9.0A, di/dt ≤ 540A/µs, V
= 25Ω, I
= 25V, starting T
/∆T
J
AS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
= 9.0A. (See Figure 12)
Parameter
J
= 25°C, L = 3.1mH
Parameter
Parameter
DD
™
≤ V
(BR)DSS
, T
J
J
≤ 175°C
= 25°C (unless otherwise specified)
J
= 25°C (unless otherwise specified)
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Min. Typ. Max. Units
Min. Typ. Max. Units
Min. Typ. Max. Units
100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
1.0
7.7
†
‡
ˆ
0.122
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
800
160
–––
–––
–––
140
740
This is applied for L
R
7.2
4.5
7.5
lead and center of die contact
When mounted on 1" square PCB (FR-4 or G-10
Material ). For recommended footprint and soldering
techniques refer to application note #AN-994.
53
30
26
90
θ
is measured at Tj approximately 90°C.
0.105
0.125
0.155
1100
-100
–––
–––
–––
250
100
–––
–––
–––
–––
–––
–––
–––
–––
–––
210
2.0
4.8
1.3
25
34
20
17
60
V/°C
nC
nH
nC
µA
nA
pF
ns
ns
Ω
V
V
S
A
V
S
Between lead,
from package
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
V
I
V
V
V
I
R
V
6mm (0.25in.)
and center of die contact
V
V
ƒ = 1.0MHz
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/µs
D
D
of D-PAK is measured between
J
J
GS
GS
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
G
GS
GS
DS
= 9.0A
= 9.0A
= 25°C, I
= 25°C, I
= 6.0 Ω
= V
= 25V, I
= 100V, V
= 80V, V
= 80V
= 25V
= 0V, I
= 10V, I
= 5.0V, I
= 4.0V, I
= 16V
= -16V
= 5.0V
= 50V
= 5.0V
= 0V
GS
, I
D
Conditions
Conditions
Conditions
fg
fg
D
S
F
D
D
g
= 250µA
D
D
GS
= 250µA
= 9.0A
= 9.0A
= 9.0A, V
= 10A
GS
= 10A
= 9.0A
fg
= 0V, T
= 0V
www.irf.com
D
f
g
f
f
= 1mA
G
J
GS
= 150°C
G
= 0V
D
S
S
D
f