AUIRFR5410TRL International Rectifier, AUIRFR5410TRL Datasheet

AUIRFR5410TRL

Manufacturer Part Number

AUIRFR5410TRL

Description

MOSFET P-CH 100V 13A DPAK

Manufacturer

International Rectifier

Series

HEXFET®r

Datasheet

1.AUIRFR5410TRL.pdf (12 pages)

Specifications of AUIRFR5410TRL

Input Capacitance (ciss) @ Vds

760pF @ 25V

Fet Type

MOSFET P-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

205 mOhm @ 7.8A, 10V

Drain To Source Voltage (vdss)

100V

Current - Continuous Drain (id) @ 25° C

13A

Vgs(th) (max) @ Id

4V @ 250µA

Gate Charge (qg) @ Vgs

58nC @ 10V

Power - Max

66W

Mounting Type

Surface Mount

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Meier Automation Equipment Co., Limited

Part Number:

AUIRFR5410TRL

Manufacturer:

Quantity:

20 000

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Download datasheet (261Kb)

Features

Description

Specifically designed for Automotive applications,

this Cellular Planar design of HEXFET® Power

MOSFETs utilizes the latest processing techniques

to achieve low on-resistance per silicon area. This

benefit combined with the fast switching speed and

ruggedized device design that HEXFET power

MOSFETs are well known for, provides the designer

with an extremely efficient and reliable device for

use in Automotive and a wide variety of other

applications.

Absolute Maximum Ratings

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These

are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in

the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device

reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.

Ambient temperature (T

www.irf.com

HEXFET

*Qualification standards can be found at http://www.irf.com/

dv/dt

Thermal Resistance

STG

θJC

θJA

@ T

Advanced Planar Technology

P-Channel MOSFET

Low On-Resistance

Dynamic dV/dT Rating

175°C Operating Temperature

Fast Switching

Fully Avalanche Rated

Repetitive Avalanche Allowed up to

Tjmax

Lead-Free, RoHS Compliant

Automotive Qualified *

= 25°C Continuous Drain Current, V

= 100°C Continuous Drain Current, V

= 25°C Power Dissipation

is a registered trademark of International Rectifier.

Pulsed Drain Current

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy (Thermally Limited)

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds (1.6mm from case )

Junction-to-Case

Junction-to-Ambient (PCB mount)

Junction-to-Ambient

) is 25°C, unless otherwise specified.

Parameter

AUTOMOTIVE GRADE

@ 10V

Gate

(BR)DSS

HEXFET Power MOSFET

DS(on)

AUIRFR5410

Typ.

–––

Drain

D-Pak

-55 to + 150

max.

Max.

0.53

300

-8.2

-8.4

-5.0

± 20

194

-13

-52

6.3

Max.

110

1.9

0.205Ω

-100V

Source

-13A

Units

W/°C

°C/W

V/ns

°C

Related parts for AUIRFR5410TRL

AUIRFR5410TRL Summary of contents

Page 1

... Soldering Temperature, for 10 seconds (1.6mm from case ) Thermal Resistance Parameter gj R Junction-to-Case θJC R Junction-to-Ambient (PCB mount) θJA R Junction-to-Ambient θJA ® HEXFET is a registered trademark of International Rectifier. *Qualification standards can be found at http://www.irf.com/ www.irf.com AUTOMOTIVE GRADE HEXFET Power MOSFET D V (BR)DSS R DS(on AUIRFR5410 ...

Page 2

Static Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V /∆T Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) gfs Forward Transconductance I Drain-to-Source Leakage Current DSS I Gate-to-Source Forward ...

Page 3

Qualification Information Qualification Level Moisture Sensitivity Level Machine Model Human Body Model ESD Charged Device Model RoHS Compliant www.irf.com Automotive (per AEC-Q101) Comments: This part number(s) passed Automotive qualification. IR’s Industrial and Consumer qualification level is granted by extension ...

Page 4

VGS TOP -15V -10V -8.0V -7.0V -6.0V -5.5V 10 -5.0V BOTTOM -4.5V 1 -4.5V 0.1 20µs PULSE WIDTH ° J 0.01 0 Drain-to-Source Voltage (V) DS 100 ...

Page 5

1MHz iss rss oss ds gd 1600 1200 C iss 800 C oss C rss ...

Page 6

T , Case Temperature ( 0.50 1 0.20 0.10 0.05 0.1 0.02 SINGLE PULSE 0.01 (THERMAL RESPONSE) 0.01 0.00001 0.0001 6 ≤ 1 ...

Page 7

D.U DRIVER -20V 0.01 Ω (BR)DSS Charge www.irf.com 500 400 300 15V 200 100 0 ...

Page 8

D.U.T + ‚ - Driver Gate Drive P.W. D.U.T. I Waveform SD Reverse Recovery Current D.U.T. V Waveform DS Re-Applied Voltage Inductor Curent 8 + ƒ • • • - „ • • • P.W. Period D ...

Page 9

D-Pak Part Marking Information www.irf.com 9 ...

Page 10

TR 12.1 ( .476 ) FEED DIRECTION 11.9 ( .469 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 13 INCH NOTES : 1. ...

Page 11

... Ordering Information Base part Package Type number AUIRFR5410 Dpak www.irf.com Standard Pack Form Quantity Tube 75 Tape and Reel 2000 Tape and Reel Left 3000 Tape and Reel Right 3000 Complete Part Number AUIRFR5410 AUIRFR5410TR AUIRFR5410TRL AUIRFR5410TRR 11 ...

Page 12

... IR product could create a situation where personal injury or death may occur. Should Buyer purchase or use IR products for any such unintended or unauthorized application, Buyer shall indemnify and hold International Rectifier and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and ...

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