AUIRF7647S2TR1 International Rectifier, AUIRF7647S2TR1 Datasheet

AUIRF7647S2TR1

Manufacturer Part Number

AUIRF7647S2TR1

Description

MOSFET N-CH 100V 5.9A DIRECTFET

Manufacturer

International Rectifier

Series

HEXFET®r

Datasheet

1.AUIRF7647S2TR.pdf (11 pages)

Specifications of AUIRF7647S2TR1

Input Capacitance (ciss) @ Vds

910pF @ 25V

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

31 mOhm @ 14A, 10V

Drain To Source Voltage (vdss)

100V

Current - Continuous Drain (id) @ 25° C

5.9A

Vgs(th) (max) @ Id

5V @ 50µA

Gate Charge (qg) @ Vgs

21nC @ 10V

Power - Max

2.5W

Mounting Type

Package / Case

Continuous Drain Current Id

5.9A

Drain Source Voltage Vds

100V

On Resistance Rds(on)

0.026ohm

Rds(on) Test Voltage Vgs

10V

Transistor Case Style

DirectFET SC

No. Of Pins

Svhc

No SVHC

Rohs Compliant

Yes

Configuration

Single Quad Drain Dual Source

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

31 mOhms

Drain-source Breakdown Voltage

100 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

5.9 A

Power Dissipation

2.5 W

Gate Charge Qg

14 nC

Minimum Operating Temperature

- 55 C

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Current page: 1 of 11
Download datasheet (248Kb)

www.irf.com

•

Description

The AUIRF7647S2TR/TR1 combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFET

packaging platform to produce a best in class part for Automotive Class D audio amplifier applications. The DirectFET package is compatible with

existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering tech-

niques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual

sided cooling to maximize thermal transfer in automotive power systems.

This HEXFET Power MOSFET optimizes gate charge, body diode reverse recovery and internal gate resistance to improve key Class D audio

amplifier performance factors such as efficiency, THD and EMI. Moreover the DirectFET packaging platform offers low parasitic inductance

and resistance when compared to conventional wire bonded SOIC packages which improves EMI performance by reducing the voltage

ringing that accompanies current transients. These features combine to make this MOSFET a highly desirable component in Automotive

Class D audio amplifier systems.

Applicable DirectFET Outline and Substrate Outline

HEXFET

Absolute Maximum Ratings

Thermal Resistance

STG

AS(tested)

θJA

θJ-Can

θJ-PCB

@ T

= 25°C

= 100°C

= 25°C

is a registered trademark of International Rectifier.

Drain-to-Source Voltage

Gate-to-Source Voltage

Continuous Drain Current, V

Pulsed Drain Current

Power Dissipation

Single Pulse Avalanche Energy (Thermally Limited)

Single Pulse Avalanche Energy (Tested Value)

Avalanche Current

Repetitive Avalanche Energy

Peak Soldering Temperature

Operating Junction and

Storage Temperature Range

Junction-to-Ambient

Junction-to-Can

Junction-to-PCB Mounted

Linear Derating Factor

Ãg

Parameter

AUTOMOTIVE GRADE

Ω

@ 10V

(Silicon Limited)

Typ.

See Fig. 18a,18b,16,17

12.5

–––

1.4

DirectFET™ Power MOSFET ‚

AUIRF7647S2TR1

(BR)DSS

DS(on)

G (typical)

g (typical)

AUIRF7647S2TR

-55 to + 175

Max.

± 20

0.27

100

270

5.9

2.5

typ.

max.

Max.

–––

3.7

DirectFET™ ISOMETRIC

26mΩ

31mΩ

14nC

100V

1.6Ω

Units

°C/W

W/°C

07/13/2010

°C

Related parts for AUIRF7647S2TR1

AUIRF7647S2TR1 Summary of contents

Page 1

... AUTOMOTIVE GRADE Ω Parameter @ 10V (Silicon Limited 10V (Silicon Limited 10V (Silicon Limited Ãg g Parameter AUIRF7647S2TR AUIRF7647S2TR1 DirectFET™ Power MOSFET ‚ V 100V (BR)DSS R typ. 26mΩ DS(on) max. 31mΩ R 1.6Ω G (typical) Q 14nC g (typical DirectFET™ ISOMETRIC Max. Units ...

Page 2

Static @ T = 25°C (unless otherwise specified) J Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V /∆T Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) ∆V /∆T Gate Threshold Voltage Coefficient GS(th) ...

Page 3

Qualification Information Qualification Level Moisture Sensitivity Level Machine Model Human Body Model ESD Charged Device Model RoHS Compliant www.irf.com Automotive (per AEC-Q101) Comments: This part number(s) passed Automotive qualification. IR’s Industrial and Consumer qualification level is granted by extension ...

Page 4

PULSE WIDTH Tj = 25°C 0.001 0 Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 125° ...

Page 5

50µ 250µA 3 1.0mA 2 1.0A 2.0 1.5 1.0 -75 -50 - 100 125 150 175 200 T ...

Page 6

OPERATION IN THIS AREA LIMITED (on) 100 100µsec 10 1msec 10msec 25° 175°C Single Pulse 0 100 Drain-to-Source Voltage (V) Fig 13. Maximum Safe ...

Page 7

TOP Single Pulse BOTTOM 1.0% Duty Cycle 14A 100 Starting Junction Temperature (°C) Fig 17. Maximum Avalanche Energy vs. Temperature ...

Page 8

Please see AN-1035 for DirectFET assembly details and stencil and substrate design recommendations G=GATE D=DRAIN S=SOURCE www.irf.com ...

Page 9

Please see AN-1035 for DirectFET assembly details and stencil and substrate design recommendations ™ Part Marking www.irf.com DIMENSIONS METRIC CODE MIN A 4.75 B 3.70 C 2.75 D 0.35 E 0.58 F 0.78 0. 0.63 J 0.38 ...

Page 10

... Tape & Reel Dimension (Showing component orientation NOTE: Controlling dimensions in mm Std reel quantity is 4800 parts. (ordered as AUIRF7647S2TR). For 1000 parts on 7" reel, order AUIRF7647S2TR1 REEL DIMENSIONS STANDARD OPTION (QTY 4800) METRIC IMPERIAL MIN CODE MIN MAX MAX MIN A 330.0 N ...

Page 11

... Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or services without notice. Part numbers designated with the “AU” prefix follow automotive industry and / or customer specific requirements with regards to product discontinuance and process change notification. All products are sold subject to IR’ ...

Related keywords

AUIRF7647S2TR1 datasheet
AUIRF7647S2TR1 data sheet
AUIRF7647S2TR1 pdf datasheet
AUIRF7647S2TR1 component
AUIRF7647S2TR1 part
AUIRF7647S2TR1 distributor
AUIRF7647S2TR1 RoHS
AUIRF7647S2TR1 datasheet download