AUIRFR3504Z International Rectifier, AUIRFR3504Z Datasheet - Page 4

• Manufacturer Part Number: AUIRFR3504Z
• Description: MOSFET N-CH 40V 42A DPAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of AUIRFR3504Z

• Input Capacitance (ciss) @ Vds: 1510pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 9 mOhm @ 42A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 42A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 45nC @ 10V
• Power - Max: 90W
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 40V
• On Resistance Rds(on): 8230µohm
• Rds(on) Test Voltage Vgs: 10V
• Operating Temperature Range: -55°C To +175°C
• Transistor Case Style: D-PAK
• Rohs Compliant: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 9 mOhms
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 77 A
• Power Dissipation: 90 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 30 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

1000.0
4
100.0
1000
10.0
Fig 3. Typical Transfer Characteristics
Fig 1. Typical Output Characteristics
100
1.0
0.1
0.1
10
1
4.0
0.1
T J = 175°C
TOP
BOTTOM
V DS , Drain-to-Source Voltage (V)
V GS , Gate-to-Source Voltage (V)
5.0
T J = 25°C
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
6.0
4.5V
1
7.0
30µs PULSE WIDTH
Tj = 25°C
V DS = 20V
30µs PULSE WIDTH
8.0
10
9.0
10.0
100
Fig 4. Typical Forward Transconductance
1000
Fig 2. Typical Output Characteristics
60
50
40
30
20
10
100
0
10
1
0
0.1
TOP
BOTTOM
I D, Drain-to-Source Current (A)
V DS , Drain-to-Source Voltage (V)
10
Vs. Drain Current
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
1
20
V DS = 10V
380µs PULSE WIDTH
4.5V
30µs PULSE WIDTH
Tj = 175°C
30
T J = 175°C
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T J = 25°C
10
40
50
100