AUIRFZ44Z International Rectifier, AUIRFZ44Z Datasheet - Page 7

• Manufacturer Part Number: AUIRFZ44Z
• Description: MOSFET N-CH 55V 51A TO220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of AUIRFZ44Z

• Input Capacitance (ciss) @ Vds: 1420pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 13.9 mOhm @ 31A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 51A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 43nC @ 10V
• Power - Max: 80W
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Continuous Drain Current Id: 51A
• Drain Source Voltage Vds: 55V
• On Resistance Rds(on): 0.0111ohm
• Rds(on) Test Voltage Vgs: 10V
• Transistor Case Style: TO-220AB
• No. Of Pins: 3
• Svhc: No SVHC (15-Dec-2010)
• Rohs Compliant: Yes
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 13.9 mOhms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 51 A
• Power Dissipation: 80 W
• Mounting Style: Through Hole
• Gate Charge Qg: 29 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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Fig 12a. Unclamped Inductive Test Circuit
Fig 12b. Unclamped Inductive Waveforms
Fig 13a. Basic Gate Charge Waveform
I
AS
Fig 13b. Gate Charge Test Circuit
V
G
R G
20V
V
1K
V DS
GS
Q
t p
GS
t p
I AS
D.U.T
0.01
L
DUT
V
Q
Charge
Q
(BR)DSS
GD
G
L
15V
DRIVER
VCC
+
-
V DD
A
Fig 14. Threshold Voltage vs. Temperature
4.0
3.0
2.0
1.0
400
350
300
250
200
150
100
50
-75 -50 -25
0
Fig 12c. Maximum Avalanche Energy
25
Starting T J , Junction Temperature (°C)
I D = 250µA
50
T J , Temperature ( °C )
0
vs. Drain Current
25
75
50
100
75 100 125 150 175 200
TOP
BOTTOM 31A
125
150
I D
3.8A
5.5A
7
175