AUIRF1405ZS International Rectifier, AUIRF1405ZS Datasheet - Page 4

• Manufacturer Part Number: AUIRF1405ZS
• Description: MOSFET N-CH 55V 150A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of AUIRF1405ZS

• Input Capacitance (ciss) @ Vds: 4780pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 4.9 mOhm @ 75A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 150A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 180nC @ 10V
• Power - Max: 230W
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D²Pak (2 leads + Tab), TO-263AB
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 4.9 mOhms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 150 A
• Power Dissipation: 230 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 120 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

4
1000
1000
100
100
Fig 3. Typical Transfer Characteristics
Fig 1. Typical Output Characteristics
10
10
1
1
0.1
4
TOP
BOTTOM
T J = 25°C
V DS , Drain-to-Source Voltage (V)
V GS , Gate-to-Source Voltage (V)
6
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
1
20µs PULSE WIDTH
Tj = 25°C
8
V DS = 25V
20µs PULSE WIDTH
4.5V
T J = 150°C
10
10
100
12
1000
200
175
150
125
100
Fig 4. Typical Forward Transconductance
100
Fig 2. Typical Output Characteristics
75
50
25
10
1
0
0.1
0
TOP
BOTTOM
25
V DS , Drain-to-Source Voltage (V)
I D ,Drain-to-Source Current (A)
vs. Drain Current
50
T J = 25°C
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
1
75
T J = 175°C
100 125 150 175 200
20µs PULSE WIDTH
Tj = 175°C
4.5V
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10
100