IXXH50N60C3D1 IXYS, IXXH50N60C3D1 Datasheet
IXXH50N60C3D1
Specifications of IXXH50N60C3D1
Related parts for IXXH50N60C3D1
IXXH50N60C3D1 Summary of contents
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... CES CE CES GE = ±20V 0V, V GES 36A 15V, Note 1 CE(sat © 2010 IXYS CORPORATION, All Rights Reserved Advance Technical Information IXXH50N60C3D1 Maximum Ratings 600 = 1MΩ 600 GE ±20 ±30 100 50 30 200 25 200 = 5Ω 100 G CM ≤ CES = 150° 600 -55 ... +175 175 -55 ...
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... Characteristic Values Min. Typ 150°C 1 100° 100°C 100 J = 30V 25 R (clamp 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXXH50N60C3D1 TO-247 (IXXH) Outline Max Terminals Gate 3 - Emitted mJ Dim. Millimeter 100 ns Min. Max 4.7 A 2.2 0. ...
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... T = 25º 54A IXXH50N60C3D1 Fig. 2. Extended Output Characteristics @ Volts CE Fig. 4. Dependence of V Junction Temperature V = 15V 54A 36A -50 - Degrees Centigrade J Fig. 6. Input Admittance T = 150ºC J 25º ...
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... C ies oes res 10 0 100 0.4 0.1 25µs 100µs 1ms 10ms DC 0.01 100 1000 0.00001 IXXH50N60C3D1 Fig. 8. Gate Charge V = 300V 36A 10mA NanoCoulombs G Fig. 10. Reverse-Bias Safe Operating Area T = 150º Ω < 10V / ns 200 300 400 Fig. 11. Maximum Transient Thermal Impedance ...
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... 15V G GE 100 V = 360V CE 100 IXXH50N60C3D1 Fig. 14. Inductive Switching Energy Loss vs. Collector Current off 150ºC J Ω 15V 360V Amperes C Fig. 16. Inductive Turn-off Switching Times vs. Gate Resistance d(off 150ºC, = 15V ...
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... Ω 15V 360V Degrees Centigrade J IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 90 110 100 54A 36A 100 125 150 IXXH50N60C3D1 Fig. 20. Inductive Turn-on Switching Times vs. Collector Current d(on Ω 15V 360V 150º 25º Amperes ...
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... Fig. 23. Reverse Recovery Charge Q F Versus -di / 100° 300V 60A 30A 15A 160 0 200 400 600 -di /dt F Fig. 26. Recovery Time t -di /dt F 0.01 0.1 t IXXH50N60C3D1 100° 300V 60A 30A 15A 1000 0 200 400 A/μs /dt F Fig. 24. Peak Reverse Current I r Versus - 100° ...