IRG7IA13UPBF International Rectifier, IRG7IA13UPBF Datasheet

no-image

IRG7IA13UPBF

Manufacturer Part Number
IRG7IA13UPBF
Description
IGBT PDP TRENCH 330V 20A TO220FP
Manufacturer
International Rectifier
Datasheet

Specifications of IRG7IA13UPBF

Igbt Type
Trench
Voltage - Collector Emitter Breakdown (max)
360V
Vce(on) (max) @ Vge, Ic
1.52V @ 15V, 12A
Current - Collector (ic) (max)
20A
Power - Max
34W
Input Type
Standard
Mounting Type
*
Package / Case
*
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Features
l
l
l
l
l
Description
This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced
trench IGBT technology to achieve low V
efficiency. Additional features are 150°C operating junction temperature and high repetitive peak current
capability. These features combine to make this IGBT a highly efficient, robust and reliable device for PDP
applications.
Absolute Maximum Ratings
V
I
I
I
P
P
T
T
Thermal Resistance
R
R
R
Wt
www.irf.com
C
C
RP
GE
D
D
J
STG
Advanced Trench IGBT Technology
Optimized for Sustain and Energy Recovery
Low V
High repetitive peak current capability
Lead Free package
θJC
θCS
θJA
circuits in PDP applications
for improved panel efficiency
@ T
@ T
@T
@T
@ T
C
C
C
C
C
= 25°C
= 100°C
= 25°C
= 100°C
CE(on)
= 25°C
and Energy per Pulse (E
Gate-to-Emitter Voltage
Continuous Collector Current, V
Continuous Collector, V
Repetitive Peak Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Soldering Temperature for 10 seconds
Mounting Torque, 6-32 or M3 Screw
Junction-to-Case
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
d
Parameter
Parameter
PULSE
CE(on)
GE
PDP TRENCH IGBT
@ 15V
TM
and low E
GE
)
@ 15V
V
V
I
T
RP
J
CE
CE(ON)
PULSE
max
max @ T
min
G
typ. @ I
TM
n-channel
G ate
G
rating per silicon area which improve panel
C
= 25°C
Typ.
0.50
–––
2.0
C
Key Parameters
E
C
10 lbf·in (1.1 N·m)
= 20A
IRG7IA13UPbF
-40 to + 150
C olle ctor
Max.
0.27
160
300
±30
20
10
34
14
C
Max.
3.7
65
TO-220 Full-Pak
1.42
IRG7IA13UPbF
360
160
150
Em itter
E
G
Units
Units
01/26/2011
C
W/°C
°C/W
°C
W
E
g
V
A
°C
V
V
A
1

Related parts for IRG7IA13UPBF

IRG7IA13UPBF Summary of contents

Page 1

... CE(on) PULSE Parameter @ 15V GE @ 15V GE Parameter d IRG7IA13UPbF Key Parameters 360 = 20A 1. 25°C 160 150 TO-220 Full-Pak E IRG7IA13UPbF olle ctor Em itter Max. Units ± 160 0.27 W/°C - 150 °C 300 10 lbf·in (1.1 N·m) Typ. Max. Units – ...

Page 2

Electrical Characteristics @ T Parameter BV Collector-to-Emitter Breakdown Voltage CES ∆ΒV /∆T Breakdown Voltage Temp. Coefficient CES J V Static Collector-to-Emitter Voltage CE(on) V Gate Threshold Voltage GE(th) ∆V /∆T Gate Threshold Voltage Coefficient GE(th Collector-to-Emitter Leakage Current ...

Page 3

18V 15V 160 12V 10V 8.0V 120 6. (V) Fig 1. Typical Output ...

Page 4

T C (°C) Fig 7. Maximum Collector Current vs. Case Temperature 1300 240V 1200 L = 220nH C = variable 1100 100°C 1000 900 800 700 600 500 ...

Page 5

Cies 100 Coes Cres 10 0 100 V CE (V) Fig 13. Typical Capacitance vs. Collector-to-Emitter Voltage 0.50 1 0.20 0.10 0.05 0.1 0.02 0.01 0.01 SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 1E-005 ...

Page 6

A RG DRIVER L B Ipulse RG DUT Fig 16a. t and E Test Circuit st PULSE Fig 16c. E Test Waveforms PULSE 6 C PULSE A PULSE B VCC Fig 16b. t Energy Current 0 ...

Page 7

TO-220 Full-Pak Package Outline Dimensions are shown in millimeters (inches) TO-220 Full-Pak Part Marking Information TO-220 Full-Pak package is not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ IR WORLD ...

Related keywords