IXXH50N60C3 IXYS, IXXH50N60C3 Datasheet

IGBT 600V 100A 600W TO247AD

IXXH50N60C3

Manufacturer Part Number
IXXH50N60C3
Description
IGBT 600V 100A 600W TO247AD
Manufacturer
IXYS
Series
XPT™, GenX3™r
Datasheet

Specifications of IXXH50N60C3

Igbt Type
PT
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.3V @ 15V, 36A
Current - Collector (ic) (max)
100A
Power - Max
600W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247-3 (TO-247AD)
Collector- Emitter Voltage Vceo Max
600 V
Collector-emitter Saturation Voltage
2.3 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current At 25 C
100 A
Gate-emitter Leakage Current
100 nA
Power Dissipation
600 W
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Vces, (v)
600
Ic25, Tc = 25°c, Igbt, (a)
100
Ic90, Tc = 90°c, Igbt, (a)
-
Ic110, Tc = 110°c, Igbt, (a)
50
Vce(sat), Typ, Tj = 25°c, Igbt (v)
2.3
Tfi, Typ, Tj = 25°c, Igbt, (ns)
42
Eoff, Typ, Tj = 125°c, Igbt (mj)
-
Eoff, Typ, Tj = 150°c, Igbt (mj)
0.48
Rthjc, Max, Igbt (c/w)
0.25
If, Tc = 90°c, Diode (a)
-
If, Tc = 110°c, Diode (a)
-
Rthjc, Max, Diode (k/w)
-
Package Style
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
XPT
GenX3
Extreme Light Punch Through
IGBT for 20-60 kHz Switching
Symbol
V
V
V
V
I
I
I
I
E
SSOA
(RBSOA)
t
(SCSOA)
P
T
T
T
T
T
M
Weight
Symbol
(T
BV
V
I
I
V
© 2010 IXYS CORPORATION, All Rights Reserved
C25
C110
CM
A
CES
GES
sc
J
JM
stg
L
SOLD
CES
CGR
GES
GEM
AS
C
GE(th)
CE(sat)
d
J
CES
= 25°C, Unless Otherwise Specified
TM
600V
Clamped Inductive Load
T
T
Continuous
Transient
T
T
T
T
T
V
V
R
T
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Mounting Torque
TM
Test Conditions
Test Conditions
I
V
V
I
I
C
C
C
J
J
C
C
C
C
C
C
GE
GE
CE
CE
G
= 25°C to 175°C
= 25°C to 175°C, R
= 25°C
= 110°C
= 25°C, 1ms
= 25°C
= 25°C
= 15V, V
= 22Ω, Non Repetitive
= 25°C
= 15V, T
= 250μA, V
= V
= 0V, V
= 36A, V
= 250μA, V
CES
, V
GE
CE
VJ
GE
GE
= ±20V
= 360V, T
= 150°C, R
= 0V
CE
= 15V, Note 1
GE
= 0V
= V
GE
GE
J
= 1MΩ
G
= 150°C
= 5Ω
Advance Technical Information
T
T
J
J
= 150°C
= 150°C
IXXH50N60C3
600
Min.
3.0
Characteristic Values
@V
-55 ... +175
-55 ... +175
Maximum Ratings
I
CE
CM
1.13/10
2.45
1.95
= 100
Typ.
100
200
±20
±30
200
V
600
175
300
260
600
600
10
50
25
CES
6
±100
Max.
2.30
Nm/lb.in.
5.5
25
2 mA
mJ
μA
nA
°C
°C
°C
°C
°C
μs
W
V
V
V
V
V
A
A
A
A
A
V
V
V
g
V
I
V
t
TO-247 AD
G = Gate
E = Emitter
Features
Advantages
Applications
C110
fi(typ)
Optimized for 20-60kHz Switching
Square RBSOA
Avalanche Capability
Short Circuit Capability
International Standard Package
High Power Density
175°C Rated
Extremely Rugged
Low Gate Drive Requirement
Easy to Parallel
Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
CES
CE(sat)
G
C
E
= 600V
= 50A
= 42ns
≤ ≤ ≤ ≤ ≤ 2.30V
C
Tab = Collector
Tab
= Collector
DS100265(12/10)

Related parts for IXXH50N60C3

IXXH50N60C3 Summary of contents

Page 1

... GE(th CES CE CES GE = ±20V 0V, V GES 36A 15V, Note 1 CE(sat © 2010 IXYS CORPORATION, All Rights Reserved Advance Technical Information IXXH50N60C3 Maximum Ratings 600 = 1MΩ 600 GE ±20 ±30 100 50 200 25 200 = 5Ω 100 G CM ≤ CES = 150° 600 -55 ... +175 175 -55 ...

Page 2

... Min. Typ 2320 138 42 64 • CES 0.48 0.21 (clamp 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXXH50N60C3 TO-247 (IXXH) Outline Max Terminals Gate 3 - Emitted mJ Dim. Millimeter 100 ns Min. Max 4.7 A 2 1 ...

Page 3

... T = 25º 54A IXXH50N60C3 Fig. 2. Extended Output Characteristics @ Volts CE Fig. 4. Dependence of V Junction Temperature V = 15V 54A 36A -50 - Degrees Centigrade J Fig. 6. Input Admittance T = 150ºC J 25º ...

Page 4

... C ies oes res 10 0 100 0.4 0.1 25µs 100µs 1ms 10ms DC 0.01 100 1000 0.00001 IXXH50N60C3 Fig. 8. Gate Charge V = 300V 36A 10mA NanoCoulombs G Fig. 10. Reverse-Bias Safe Operating Area T = 150º Ω < 10V / ns 200 300 400 Fig. 11. Maximum Transient Thermal Impedance ...

Page 5

... 15V G GE 100 V = 360V CE 100 IXXH50N60C3 Fig. 14. Inductive Switching Energy Loss vs. Collector Current off 150ºC J Ω 15V 360V Amperes C Fig. 16. Inductive Turn-off Switching Times vs. Gate Resistance d(off 150ºC, = 15V ...

Page 6

... 360V Degrees Centigrade J IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 90 110 100 54A 36A 100 125 150 IXXH50N60C3 Fig. 20. Inductive Turn-on Switching Times vs. Collector Current d(on Ω 15V 360V 150º 25º Amperes IXYS REF: IXX_50N60C3 (5D)5-20-10 ...

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