IXXH100N60C3 IXYS, IXXH100N60C3 Datasheet

IGBT 600V 190A 830W TO247AD

IXXH100N60C3

Manufacturer Part Number
IXXH100N60C3
Description
IGBT 600V 190A 830W TO247AD
Manufacturer
IXYS
Series
XPT™, GenX3™r
Datasheet

Specifications of IXXH100N60C3

Igbt Type
PT
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.2V @ 15V, 70A
Current - Collector (ic) (max)
190A
Power - Max
830W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247-3 (TO-247AD)
Collector- Emitter Voltage Vceo Max
600 V
Collector-emitter Saturation Voltage
2.2 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current At 25 C
190 A
Gate-emitter Leakage Current
100 nA
Power Dissipation
830 W
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Vces, (v)
600
Ic25, Tc = 25°c, Igbt, (a)
190
Ic90, Tc = 90°c, Igbt, (a)
-
Ic110, Tc = 110°c, Igbt, (a)
100
Vce(sat), Typ, Tj = 25°c, Igbt (v)
2.2
Tfi, Typ, Tj = 25°c, Igbt, (ns)
75
Eoff, Typ, Tj = 125°c, Igbt (mj)
-
Eoff, Typ, Tj = 150°c, Igbt (mj)
1.4
Rthjc, Max, Igbt (c/w)
0.18
If, Tc = 90°c, Diode (a)
-
If, Tc = 110°c, Diode (a)
-
Rthjc, Max, Diode (k/w)
-
Package Style
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
XPT
GenX3
Extreme Light Punch Through
IGBT for 20-60kHz Switching
Symbol
V
V
V
V
I
I
I
I
I
E
SSOA
(RBSOA)
t
(SCSOA)
P
T
T
T
T
T
M
Weight
Symbol
(T
BV
V
I
I
V
© 2010 IXYS CORPORATION, All Rights Reserved
C25
LRMS
C110
CM
A
CES
GES
sc
J
JM
stg
L
SOLD
CES
CGR
GES
GEM
AS
C
GE(th)
CE(sat)
d
J
CES
= 25°C, Unless Otherwise Specified)
TM
600V
Clamped Inductive Load
T
T
Continuous
Transient
T
Terminal Current Limit
T
T
T
T
V
V
R
T
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Mounting Torque
TM
Test Conditions
Test Conditions
I
V
V
I
I
C
C
C
J
J
C
C
C
C
C
C
GE
GE
CE
CE
G
= 25°C ( Chip Capability )
= 25°C to 175°C
= 25°C to 175°C, R
= 110°C
= 25°C, 1ms
= 25°C
= 25°C
= 10Ω, Non Repetitive
= 25°C
= 15V, T
= 15V, V
= 250μA, V
= V
= 0V, V
= 70A, V
= 250μA, V
CES
, V
GE
VJ
CE
GE
GE
= ±20V
= 150°C, R
= 360V, T
= 0V
CE
= 15V, Note 1
GE
= 0V
= V
GE
GE
J
= 1MΩ
G
= 150°C
= 2Ω
Advance Technical Information
T
T
J
J
= 150°C
= 150°C
IXXH100N60C3
Characteristic Values
Min.
600
3.0
@V
-55 ... +175
-55 ... +175
Maximum Ratings
I
CE
CM
1.13/10
Typ.
1.68
1.97
= 200
600
±20
±30
100
380
V
830
175
300
260
600
600
190
160
10
50
CES
6
Max.
±100
2.20
Nm/lb.in.
5.5
25
2 mA
mJ
μA
nA
°C
°C
°C
°C
°C
μs
W
V
V
V
V
V
A
A
A
A
A
A
V
V
V
g
V
I
V
t
TO-247 AD
G = Gate
E = Emitter
Features
Advantages
Applications
C110
fi(typ)
Optimized for 20-60kHz Switching
Square RBSOA
Avalanche Rated
Short Circuit Capability
High Current Handling Capability
International Standard Package
High Power Density
Low Gate Drive Requirement
Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
CES
CE(sat)
G
C
E
= 600V
= 100A
= 75ns
≤ ≤ ≤ ≤ ≤ 2.20V
C
Tab = Collector
Tab
= Collector
DS100282(12/10)

Related parts for IXXH100N60C3

IXXH100N60C3 Summary of contents

Page 1

... CES CE CES GE = ±20V 0V, V GES 70A 15V, Note 1 CE(sat © 2010 IXYS CORPORATION, All Rights Reserved Advance Technical Information IXXH100N60C3 Maximum Ratings 600 = 1MΩ 600 GE ±20 ±30 190 160 100 380 50 600 = 2Ω 200 G CM ≤ CES = 150° 830 -55 ... +175 175 -55 ...

Page 2

... CES 2. 0. 3.00 105 115 1.40 0.15 (clamp 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXXH100N60C3 TO-247 (IXXH) Outline Max Terminals Gate 3 - Emitted mJ Dim. Millimeter ns Min. Max 4.7 A 2 1.0 b 1.65 ...

Page 3

... J = 15V GE 13V 12V 11V 10V 2.5 3 3.5 4 180 T = 25ºC J 160 140 120 100 IXXH100N60C3 Fig. 2. Extended Output Characteristics @ 15V 14V GE 13V 12V Volts CE Fig. 4. Dependence of V Junction Temperature 2 15V GE 1 140A C 1.6 1 70A 1.2 C 1.0 ...

Page 4

... C ies 160 140 120 C oes 100 res 25µs 0.1 100µs 1ms 0.01 10ms DC 0.001 100 1000 0.00001 IXXH100N60C3 Fig. 8. Gate Charge V = 300V 70A 10mA NanoCoulombs G Fig. 10. Reverse-Bias Safe Operating Area T = 150º Ω < 10V / ns ...

Page 5

... Ω 15V 160 G GE 140 V = 360V CE 130 140 120 110 120 100 100 100 IXXH100N60C3 Fig. 14. Inductive Switching Energy Loss vs. Collector Current off on Ω 15V 360V 150º Amperes C Fig. 16. Inductive Turn-off Switching Times vs. Gate Resistance t t ...

Page 6

... IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 140 84 76 120 68 100 100A 50A d(on Ω 15V 360V 100 125 150 IXXH100N60C3 Fig. 20. Inductive Turn-on Switching Times vs. Collector Current d(on Ω 15V 360V 25º Amperes 150º 100 IXYS REF: IXX_100N60C3(7D)9-30-10-A ...

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