IXXK100N60C3H1 IXYS, IXXK100N60C3H1 Datasheet

IGBT 600V 170A 695W TO264

IXXK100N60C3H1

Manufacturer Part Number
IXXK100N60C3H1
Description
IGBT 600V 170A 695W TO264
Manufacturer
IXYS
Series
XPT™, GenX3™r
Datasheet

Specifications of IXXK100N60C3H1

Igbt Type
PT
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.2V @ 15V, 70A
Current - Collector (ic) (max)
170A
Power - Max
695W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-264-3, TO-264AA Variation
Collector- Emitter Voltage Vceo Max
600 V
Collector-emitter Saturation Voltage
2.2 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current At 25 C
170 A
Gate-emitter Leakage Current
100 nA
Power Dissipation
695 W
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Vces, (v)
600
Ic25, Tc = 25°c, Igbt, (a)
170
Ic90, Tc = 90°c, Igbt, (a)
100
Ic110, Tc = 110°c, Igbt, (a)
-
Vce(sat), Typ, Tj = 25°c, Igbt (v)
2.2
Tfi, Typ, Tj = 25°c, Igbt, (ns)
75
Eoff, Typ, Tj = 125°c, Igbt (mj)
-
Eoff, Typ, Tj = 150°c, Igbt (mj)
1.4
Rthjc, Max, Igbt (c/w)
0.18
If, Tc = 90°c, Diode (a)
-
If, Tc = 110°c, Diode (a)
65
Rthjc, Max, Diode (k/w)
0.30
Package Style
TO-264
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXXK100N60C3H1
Manufacturer:
ST
Quantity:
230
XPT
GenX3
Extreme Light Punch Through
IGBT for 20-60kHz Switching
Symbol
V
V
V
V
I
I
I
I
I
I
E
SSOA
(RBSOA)
t
(SCSOA)
P
T
T
T
T
T
M
F
Weight
Symbol
(T
BV
V
I
I
V
© 2011 IXYS CORPORATION, All Rights Reserved
C25
LRMS
C90
F110
CM
A
CES
GES
sc
J
JM
stg
L
SOLD
C
CES
CGR
GES
GEM
AS
C
GE(th)
CE(sat)
d
J
CES
= 25°C, Unless Otherwise Specified)
TM
600V
Clamped Inductive Load
T
T
Continuous
Transient
T
Terminal Current Limit
T
T
T
T
T
V
V
R
T
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Mounting Torque (TO-264)
Mounting Force
TO-264
PLUS247
TM
Test Conditions
Test Conditions
I
V
V
I
I
C
C
C
J
J
C
C
C
C
C
C
C
GE
GE
CE
CE
G
= 25°C ( Chip Capability )
= 25°C to 150°C
= 25°C to 150°C, R
= 90°C
= 110°C
= 25°C, 1ms
= 25°C
= 25°C
= 15V, V
= 10Ω, Non Repetitive
= 25°C
= 15V, T
= 250μA, V
= V
= 0V, V
= 70A, V
w/ Diode
= 250μA, V
CES
, V
GE
CE
VJ
GE
GE
= ±20V
= 360V, T
= 150°C, R
= 0V
CE
= 15V, Note 1
GE
= 0V
= V
(PLUS247)
GE
GE
J
= 1MΩ
G
= 150°C
Preliminary Technical Information
= 2Ω
T
T
J
J
= 150°C
= 125°C
IXXK100N60C3H1
IXXX100N60C3H1
20..120 /4.5..27
Min.
600
3.0
Characteristic Values
@V
-55 ... +150
-55 ... +150
Maximum Ratings
CE
I
CM
1.13/10
Typ.
1.68
1.97
= 200
V
170
120
600
±20
±30
100
340
695
150
300
260
600
600
CES
10
65
50
10
6
Max.
±100
2.20
Nm/lb.in.
5.5
50
4 mA
N/lb.
mJ
μA
nA
°C
°C
°C
°C
°C
μs
W
V
V
V
V
V
A
A
A
A
A
A
A
V
V
V
g
g
V
I
V
t
TO-264 (IXXK)
PLUS247 (IXXX)
G = Gate
C = Collector
Features
Advantages
Applications
C90
fi(typ)
Optimized for 20-60kHz Switching
Square RBSOA
Avalanche Rated
Short Circuit Capability
Anti-Parallel Ultra Fast Diode
High Current Handling Capability
High Power Density
Low Gate Drive Requirement
Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
CES
CE(sat)
G
G
C
E
G
= 600V
= 100A
= 75ns
C
≤ ≤ ≤ ≤ ≤ 2.20V
E
E
Tab = Collector
DS100283A(01/11)
Tab
= Emitter
Tab

Related parts for IXXK100N60C3H1

IXXK100N60C3H1 Summary of contents

Page 1

... GE(th CES CE CES GE = ±20V 0V, V GES 70A 15V, Note 1 CE(sat © 2011 IXYS CORPORATION, All Rights Reserved Preliminary Technical Information IXXK100N60C3H1 IXXX100N60C3H1 Maximum Ratings 600 = 1MΩ 600 GE ±20 ±30 170 120 100 65 340 50 600 = 2Ω 200 G CM ≤ CES = 150° 695 -55 ...

Page 2

... Characteristic Values Min. Typ. 1 150°C 1 100°C J 140 (clamp 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXXK100N60C3H1 IXXX100N60C3H1 TO-264 Outline Max Terminals Gate 2,4 = Collector 3 = Emitter ns 1. 0.18 °C/W °C/W PLUS247 ...

Page 3

... J = 15V GE 13V 12V 11V 10V 2.5 3 3.5 4 180 T = 25ºC J 160 140 120 100 IXXK100N60C3H1 IXXX100N60C3H1 Fig. 2. Extended Output Characteristics @ 15V 14V GE 13V 12V Volts CE Fig. 4. Dependence of V Junction Temperature 2 15V GE 1 140A C 1.6 1 70A 1 ...

Page 4

... C ies 160 140 120 C oes 100 res 25µs 0.1 100µs 1ms 0.01 10ms DC 0.001 100 1000 0.00001 IXXK100N60C3H1 IXXX100N60C3H1 Fig. 8. Gate Charge V = 300V 70A 10mA NanoCoulombs G Fig. 10. Reverse-Bias Safe Operating Area T = 150º Ω ...

Page 5

... Ω 15V 160 G GE 140 V = 360V CE 130 140 120 110 120 100 100 100 IXXK100N60C3H1 IXXX100N60C3H1 Fig. 14. Inductive Switching Energy Loss vs. Collector Current off on Ω 15V 360V 150º Amperes C Fig. 16. Inductive Turn-off Switching Times vs. Gate Resistance ...

Page 6

... IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 140 84 76 120 68 100 100A 50A d(on Ω 15V 360V 100 125 150 IXXK100N60C3H1 IXXX100N60C3H1 Fig. 20. Inductive Turn-on Switching Times vs. Collector Current d(on Ω 15V 360V 25º Amperes 150º 100 ...

Page 7

... Fig. 26 Maximum transient thermal impedance junction to case (for diode) © 2011 IXYS CORPORATION, All Rights Reserved Fig. 23. Reverse Recovery Charge Q F Versus -di / Fig. 26. Recovery Time -di /dt F 0.01 Seconds Pulse Width [ms] IXXK100N60C3H1 IXXX100N60C3H1 Fig. 24. Peak Reverse Current I r Versus -di Versus IXYS REF: IXX_100N60C3(7D)9-30-10-A ...

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