CM1400-03CP ON Semiconductor, CM1400-03CP Datasheet - Page 5

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CM1400-03CP

Manufacturer Part Number
CM1400-03CP
Description
ARRAY EMI FLTR ESD PRT 4CH 15CSP
Manufacturer
ON Semiconductor
Datasheet

Specifications of CM1400-03CP

Resistance (ohms)
100
Capacitance
30pF
Power (watts)
0.1W, 1/10W
Package / Case
15-CSP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Tolerance
-

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CM1400-03
SYMBOL
V
TCR
TCC
V
I
V
V
DIODE
LEAK
R
C
f
ESD
SIG
CL
C
Note 1: T
Note 2: ESD applied to input and output pins with respect to GND, one at a time.
Note 3: Clamping voltage is measured at the opposite side of the EMI filter to the ESD pin. For example, if ESD is applied to Pin
PARAMETER
Resistance
Capacitance
Temperature Coefficient of Resistance
Temperature Coefficient of Capacitance
Diode Voltage (reverse bias)
Diode Leakage Current (reverse bias)
Signal Voltage
In-system ESD Withstand Voltage
Clamping Voltage during ESD Discharge
MIL-STD-883 (Method 3015), 8kV
Cut-off Frequency
a) Human Body Model, MIL-STD-883,
b) Contact Discharge per IEC 61000-4-2
A1, then clamping voltage is measured at Pin C1.
Positive Clamp
Negative Clamp
Positive Transients
Negative Transients
Z
A
Method 3015
Level 4
=25
SOURCE
°
C unless otherwise specified.
=50Ω, Z
ELECTRICAL OPERATING CHARACTERISTICS
LOAD
=50Ω
Rev. 3 | Page 5 of 14 | www.onsemi.com
CONDITIONS
At 2.5V DC
At 2.5V DC
I
V
I
Note 2
Notes 2 and 3
R=100Ω, C=30pF
DIODE
LOAD
DIODE
=10μA
= 10mA
=3.3V
MIN
-1.5
5.6
±30
±15
80
24
1200
TYP
-300
100
-0.8
+10
6.0
6.8
30
58
-5
(SEE NOTE1)
MAX
-0.4
120
100
9.0
36
ppm/°C
ppm/°C
UNITS
MHz
nA
pF
kV
kV
Ω
V
V
V
V
V

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