LE24LB642CSTL-TFM-H SANYO, LE24LB642CSTL-TFM-H Datasheet
LE24LB642CSTL-TFM-H
Specifications of LE24LB642CSTL-TFM-H
LE24LB642CS-TFM-H
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LE24LB642CSTL-TFM-H Summary of contents
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... This product is licensed from Silicon Storage Technology, Inc. (USA), and manufactured and sold by SANYO Semiconductor Co., Ltd. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any " ...
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Pin Assignment Bottom view 1.50 x 1.06 x 0.50(max) Block Diagram WP SCL SDA Specifications Absolute Maximum Ratings Parameter Symbol Supply voltage DC input voltage Over-shoot voltage Storage temperature Tstg Note electrical stress exceeding ...
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DC Electrical Characteristics Parameter Supply current at reading Supply current at writing I SB Standby current I LI Input leakage current I LO Output leakage current (SDA Input low voltage V ILC ...
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... WP (write protect) pin When the WP pin is high, write protection is enabled, and writing into the 64k bit memory areas is prohibited. When the pin is low, writing is possible to all memory areas. Read operations can be performed regardless of the WP pin status. LE24LB642CS ...
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Functional Description 1 Start condition When the SCL line is at the high level, the start condition is established by changing the SDA line from high to low. The operation of the EEPROM as a slave starts in the start ...
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... EEPROM in the designated memory address will start. Rewriting is completed in the t WC period after the stop condition. During an EEPROM rewrite operation, no input is accepted and no acknowledge signals are generated ...
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... EEPROM read operations 7-1. Current address reading The address equivalent to the memory address accessed last +1 is held as the internal address of the EEPROM for both write* and read operations. Therefore, provided that the master device has recognized the position of the EEPROM address pointer, data can be read from the memory address with the current address pointer without specifying the word address. As with writing, current address reading involves receiving the 7-bit device address and read command code “ ...
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... Random read Random read is a mode in which a selected memory address is specified and its data is read. The address is specified by a dummy write input. First, when the EEPROM receives the 7-bit device address and write command code "0" following the start condition, it generates an acknowledge signal. It then receives 3-bit don’ ...
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... R PU maximum value = (2.5V − 2.5V × 0.8)/2μA = 250kΩ minimum value A resistance corresponding to the low-level output voltage (V OL max) of SANYO’s EEPROM must be set minimum value = (V DD − )/I OL Example: When V DD =2.5V 0.4V and 1mA R PU minimum value = (2.5V − 0.4)/1mA = 2.1kΩ ...
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Notes on write protect operation This product prohibits all 64k bit writing when the WP pin is high. To ensure full write protection, the WP is set high for all periods from the start condition to the stop condition, ...
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... SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellctual property rights which has resulted from the use of the technical information and products mentioned above ...