RC28F256P33BFA NUMONYX, RC28F256P33BFA Datasheet - Page 57

IC FLASH 256MBIT 95NS 64EZBGA

RC28F256P33BFA

Manufacturer Part Number
RC28F256P33BFA
Description
IC FLASH 256MBIT 95NS 64EZBGA
Manufacturer
NUMONYX
Series
Axcell™r
Datasheets

Specifications of RC28F256P33BFA

Format - Memory
FLASH
Memory Type
FLASH
Memory Size
256M (16Mx16)
Speed
95ns
Interface
Parallel
Voltage - Supply
2.3 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
64-EZBGA
Cell Type
NOR
Density
256Mb
Interface Type
Parallel/Serial
Boot Type
Bottom
Address Bus
25b
Operating Supply Voltage (typ)
2.5/3/3.3V
Operating Temp Range
-40C to 85C
Package Type
EZBGA
Sync/async
Async/Sync
Operating Temperature Classification
Industrial
Operating Supply Voltage (min)
2.3V
Operating Supply Voltage (max)
3.6V
Word Size
16b
Number Of Words
32M
Supply Current
50mA
Mounting
Surface Mount
Pin Count
64
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
898897
898897
RC28F256P33BF 898897

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
RC28F256P33BFA
Manufacturer:
Micron Technology Inc
Quantity:
10 000
P33-65nm
Figure 26: Synchronous Read-to-Write Timing
Note:
Figure 27: Write-to-Synchronous Read Timing
Note:
Datasheet
57
Address [A]
Address [A]
Data [D/Q]
Data [D/Q]
WE# [W]
RST# [P]
ADV# [V]
WAIT [T]
WAIT [T]
OE# [G]
CE# [E}
CLK [C]
OE# [G]
CE# [E]
ADV#
WE#
CLK
WAIT shown deasserted and High-Z per OE# deassertion during write operation (RCR 10=0, WAIT asserted low). Clock is
ignored during write operation.
WAIT shown deasserted and High-Z per OE# deassertion during write operation (RCR.10=0, WAIT asserted low).
W1
R105
R105
W2
R301
R302
R303
R101
R102
R306
W5
R106
W3
W3
R2
R3
W4
Latency Count
D
R16
R7
W7
W6
R4
W18
W8
W19
W20
R307
R304
R11
R11
R302
R303
R104
R104
R301
Q
R306
R106
R312
R305
R11
R11
R13
R8
R104
R104
R15
R3
W2
R2
W22
W5
W21
R4
W3
W3
D
W8
R304
W7
W18
R307
W6
Order Number:320003-09
W9
W9
Q
W15
W21
W22
R304
D
R305
Mar 2010
Q

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