NTE75188 NTE ELECTRONICS, NTE75188 Datasheet
NTE75188
Manufacturer Part Number
NTE75188
Description
IC, LINE DRIVER, QUAD, DIP-14
Manufacturer
NTE ELECTRONICS
Datasheet
1.NTE75188.pdf
(2 pages)
Specifications of NTE75188
Device Type
Line
Driver Case Style
DIP
No. Of Pins
14
No. Of Drivers
4
Package / Case
14-DIP
Description:
The NTE75 is a silicon NPN transistor in a TO111 type stud mount package that provides a unique
combination of low saturation voltage, high gain, and fast switching. This device is ideally suited for
power supply, pulse amplifier, and similar high efficiency power switching applications.
Features:
D Fast Switching: t
D Low Saturation Voltage: 250mV max @ 1A
Absolute Maximum Ratings:
Collector–Base Voltage, V
Collector–Emitter Voltage, V
Emitter–Base Voltage, V
DC Collector Current, I
Power Dissipation, P
Operating Temperature Range, T
Storage Temperature Range, T
Thermal Resistance, Junction–to–Case, R
Electrical Characteristics: (T
Note 1. Pulse Width = 300 s, Duty Cycle
Collector–Base Breakdown Voltage
Collector–Emitter Breakdown Voltage
Emitter–Base Breakdown Voltage
Collector–Emitter Cutoff Current
Collector–Base Cutoff Current
Emitter–Base Cutoff Current
T
T
A
C
= +25 C
= +100 C
Parameter
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
r
D
, t
f
C
= 300ns (Max)
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CBO
High Power Amplifier, Switch
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
stg
A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25 C unless otherwise specified)
Silicon NPN Transistor
opr
V
V
V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Symbol
(BR)CBO
(BR)CEO
(BR)EBO
I
I
I
I
CEO
CBO
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CEX
(Stud Mount)
thJC
I
I
I
V
V
V
V
2%.
NTE75
C
C
E
CE
CE
CB
EB
= 10 A
= 100mA, Note 1
= 10 A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 60V
= 110V, V
= 80V
= 6V
Test Conditions
EB
= 500mV
Min
110
80
8
–
–
–
–
Typ
–
–
–
–
–
–
–
–65 to +200 C
–65 to +200 C
Max
100
0.4
0.4
10
–
–
–
3.33 C/W
Unit
110V
30W
V
V
V
80V
A
A
A
A
2W
8V
5A
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NTE75188 Summary of contents
Page 1
Description: The NTE75 is a silicon NPN transistor in a TO111 type stud mount package that provides a unique combination of low saturation voltage, high gain, and fast switching. This device is ideally suited for power supply, pulse amplifier, and ...
Page 2
Electrical Characteristics (Cont’d): (T Parameter DC Current Gain (Note 1) Collector Saturation Voltage Base Saturation Voltage Base ON Voltage AC Current Gain Current Gain–Bandwidth Product Output Capacitance Delay Time Rise Time Storage Time Fall Time Note 1. Pulse Width = ...