AT90USB647-MU Atmel, AT90USB647-MU Datasheet - Page 358

• Manufacturer Part Number: AT90USB647-MU
• Description: MCU, 8BIT, 64K FLASH, USB, 64QFN
• Manufacturer: Atmel

Specifications of AT90USB647-MU

• Controller Family/series: AT90
• No. Of I/o's: 48
• Eeprom Memory Size: 2KB
• Ram Memory Size: 4KB
• Cpu Speed: 16MHz
• No. Of: RoHS Compliant
• Core Size: 8bit
• Program Memory Size: 64KB
• Oscillator Type: External, Internal
• Package: 64QFN EP
• Device Core: AVR
• Family Name: AT90
• Maximum Speed: 20 MHz
• Ram Size: 4 KB
• Operating Supply Voltage: 3.3|5 V
• Data Bus Width: 8 Bit
• Program Memory Type: Flash
• Number Of Programmable I/os: 48
• Interface Type: SPI/TWI/USART/USB
• On-chip Adc: 8-chx10-bit
• Operating Temperature: -40 to 85 °C
• Number Of Timers: 4
• Lead Free Status / Rohs Status: Details

28.7
28.7.1
28.7.2
28.7.3
358
Self-Programming the Flash
AT90USB64/128
Performing Page Erase by SPM
Filling the Temporary Buffer (Page Loading)
Performing a Page Write
Note:
The program memory is updated in a page by page fashion. Before programming a page with
the data stored in the temporary page buffer, the page must be erased. The temporary page buf-
fer is filled one word at a time using SPM and the buffer can be filled either before the Page
Erase command or between a Page Erase and a Page Write operation:
Alternative 1, fill the buffer before a Page Erase
Alternative 2, fill the buffer after Page Erase
If only a part of the page needs to be changed, the rest of the page must be stored (for example
in the temporary page buffer) before the erase, and then be rewritten. When using alternative 1,
the Boot Loader provides an effective Read-Modify-Write feature which allows the user software
to first read the page, do the necessary changes, and then write back the modified data. If alter-
native 2 is used, it is not possible to read the old data while loading since the page is already
erased. The temporary page buffer can be accessed in a random sequence. It is essential that
the page address used in both the Page Erase and Page Write operation is addressing the same
page. See
code example.
To execute Page Erase, set up the address in the Z-pointer, write “X0000011” to SPMCSR and
execute SPM within four clock cycles after writing SPMCSR. The data in R1 and R0 is ignored.
The page address must be written to PCPAGE in the Z-register. Other bits in the Z-pointer will
be ignored during this operation.
To write an instruction word, set up the address in the Z-pointer and data in R1:R0, write
“00000001” to SPMCSR and execute SPM within four clock cycles after writing SPMCSR. The
content of PCWORD in the Z-register is used to address the data in the temporary buffer. The
temporary buffer will auto-erase after a Page Write operation or by writing the RWWSRE bit in
SPMCSR. It is also erased after a system reset. Note that it is not possible to write more than
one time to each address without erasing the temporary buffer.
If the EEPROM is written in the middle of an SPM Page Load operation, all data loaded will be
lost.
To execute Page Write, set up the address in the Z-pointer, write “X0000101” to SPMCSR and
execute SPM within four clock cycles after writing SPMCSR. The data in R1 and R0 is ignored.
• Fill temporary page buffer
• Perform a Page Erase
• Perform a Page Write
• Perform a Page Erase
• Fill temporary page buffer
• Perform a Page Write
• Page Erase to the RWW section: The NRWW section can be read during the Page Erase.
• Page Erase to the NRWW section: The CPU is halted during the operation.
1. The different variables used in
“Simple Assembly Code Example for a Boot Loader” on page 362
Figure 28-4
are listed in
Table 28-10 on page
for an assembly
364.
7593K–AVR–11/09