NAND01GW3B2BN6E NUMONYX, NAND01GW3B2BN6E Datasheet - Page 41

• Manufacturer Part Number: NAND01GW3B2BN6E
• Description: IC, FLASH, 1GB, 25µS, TSOP-48
• Manufacturer: NUMONYX

Specifications of NAND01GW3B2BN6E

• Memory Type: Flash
• Memory Size: 1GB
• Access Time: 25µs
• Supply Voltage Range: 2.7V To 3.6V
• Memory Case Style: TSOP
• No. Of Pins: 48
• Operating Temperature Range: -40°C To +85°C
• Voltage, Vcc: 3.3V
• Rohs Compliant: Yes
• Interface: Serial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NAND01G-B2B, NAND02G-B2C
11
DC and AC parameters
This section summarizes the operating and measurement conditions, and the DC and AC
characteristics of the device. The parameters in the DC and AC characteristics tables that
follow, are derived from tests performed under the measurement conditions summarized in
Table 20: Operating and AC measurement
operating conditions in their circuit match the measurement conditions when relying on the
quoted parameters.
Table 20.
Table 21.
1. T
2. Input/output capacitances double in stacked devices.
Supply voltage (V
Ambient temperature (T
Load capacitance (C
(1 TTL GATE and C
Input pulses voltages
Input and output timing ref. voltages
Output circuit resistor R
Input rise and fall times
Symbol
C
C
A
I/O
IN
= 25 °C, f = 1 MHz. C
Input capacitance
Input/output capacitance
Operating and AC measurement conditions
Capacitance
DD
L
)
L
)
)
A
ref
)
IN
Parameter
Parameter
and C
(1)
I/O
are not 100% tested.
(2)
3 V devices (2.7 - 3.6 V)
1.8 V devices
1.8 V devices
1.8 V devices
3 V devices
3 V devices
Grade 1
Grade 6
conditions. Designers should check that the
Test condition
V
V
IN
IL
= 0 V
= 0 V
Min
–40
1.7
2.7
0.4
0
0
NAND flash
Typ
V
DC and AC parameters
8.35
DD
30
50
5
/2
Max
1.95
V
3.6
2.4
70
85
DD
Max
10
10
Units
pF
pF
kΩ
°C
°C
Unit
ns
V
V
V
V
V
pF
pF
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