PS8501L2-AX CEL, PS8501L2-AX Datasheet - Page 6

• Manufacturer Part Number: PS8501L2-AX
• Description: PHOTOCOUPLER ANALOG OUT HS 8DIP
• Manufacturer: CEL
• Series: NEPOCr

Specifications of PS8501L2-AX

• Number Of Channels: 1
• Input Type: DC
• Voltage - Isolation: 5000Vrms
• Current Transfer Ratio (min): 15% @ 16mA
• Voltage - Output: *
• Current - Output / Channel: *
• Current - Dc Forward (if): 25mA
• Vce Saturation (max): *
• Output Type: Transistor with Base, VCC
• Mounting Type: Surface Mount
• Package / Case: 8-BESOP (0.256", 6.50mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current Transfer Ratio (max): -

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ELECTRICAL CHARACTERISTICS (T
USAGE CAUTIONS
6
Diode
Detector
Coupled
*1 Typical values at T
*2 Test circuit for propagation delay time
Remark C
1. This product is weak for static electricity by designed with high-speed integrated circuit so protect against
2. By-pass capacitor of more than 0.1
3. Pins 1, 4 (which is an NC
4. Avoid storage at a high temperature and high humidity.
*1 NC: Non-Connection (No Connection)
static electricity when handling.
distance between the leads of the photocoupler and capacitor is no more than 10 mm.
Unconnected pins should not be used as a bypass for signals or for any other similar purpose because this
may degrade the internal noise environment of the device.
Forward Voltage
Reverse Current
Forward Voltage
Temperature Coefficent
Terminal Capacitance
High Level Output Current
High Level Output Current
Low Level Output Voltage
Low Level Supply Current
High Level Supply Current
DC Current Gain
Current Transfer Ratio
Isolation Resistance
Isolation Capacitance
Propagation Delay Time
(H
Propagation Delay Time
(L
Parameter
L
includes probe and stray wiring capacitance.
H)
L)
*2
*2
A
= 25 C
*1
pin) can either be connected directly to the GND pin on the LED side or left open.
Symbol
I
I
V
CTR
OH
OH
V
I
I
R
C
t
t
h
V
F
CCL
CCH
C
PHL
PLH
I
R
/ T
OL
FE
I-O
I-O
F
(1)
(2)
t
A
A
F is used between V
Data Sheet PN10656EJ04V0DS
I
V
I
V = 0 V, f = 1 MHz
I
I
I
I
I
V
I
V
V = 0 V, f = 1 MHz
I
I
= 25 C)
F
F
F
F
F
F
F
F
F
F
R
O
I-O
= 16 mA
= 16 mA
= 0 mA, V
= 0 mA, V
= 16 mA, V
= 16 mA, V
= 0 mA, V
= 16 mA, V
= 16 mA, V
= 16 mA, V
= 3 V
= 5 V, I
= 1 kV
PS8501,PS8501L1,PS8501L2,PS8501L3
O
DC
CC
CC
O
= 3 mA
CC
O
CC
CC
CC
= Open, V
Conditions
= V
= V
= Open, V
= 4.5 V, I
= 4.5 V, V
= 5 V, R
= 5 V, R
O
O
= 5.5 V
= 35 V
CC
L
L
CC
O
CC
= 1.9 k
= 1.9 k
O
= 35 V
= 2.4 mA
= 0.4 V
= 35 V
and GND near device. Also, ensure that the
MIN.
10
15
11
TYP.
0.15
0.01
0.22
0.35
150
1.7
0.7
30
65
2.1
3
*1
MAX.
500
100
2.2
0.4
0.8
0.8
10
1
mV/ C
Unit
pF
nA
pF
%
V
V
A
A
A
A
s
s