SE1470-003 Honeywell Sensing and Control, SE1470-003 Datasheet

DIODE IR EMITTING ALGAAS COAX PK

SE1470-003

Manufacturer Part Number
SE1470-003
Description
DIODE IR EMITTING ALGAAS COAX PK
Manufacturer
Honeywell Sensing and Control
Datasheets
1.SEP8506-002.pdf (18 pages)
2.SE1470-004L.pdf (4 pages)

Specifications of SE1470-003

Peak Wavelength
880nm
Forward Current If(av)
20mA
Rise Time
700ns
Fall Time Tf
700ns
Supply Voltage Range
1.8V
Operating Temperature Range
-55°C To +125°C
Viewing Angle
24°
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
SE1470-003L
Manufacturer:
HONEYWELL
Quantity:
100
FEATURES
DESCRIPTION
The SE1470 is a high intensity aluminum gallium
arsenide infrared emitting diode mounted in a glass
lensed metal can coaxial package. The package may
have a tab or second lead welded to the can as an
optional feature (SE1470-XXXL). Both leads are flexible
and may be formed as required to fit various mounting
configurations. These devices typically exhibit 70%
greater power intensity than gallium arsenide devices at
the same forward current.
SE1470
AlGaAs Infrared Emitting Diode
Compact metal can coaxial package
24¡ (nominal) beam angle
880 nm wavelength
Higher output power than GaAs at equivalent
drive currents
Wide operating temperature range
(- 55¡C to +125¡C)
Mechanically and spectrally matched to SD1420
photodiode, SD1440 phototransistor and
SD1410 photodarlington
12
SE1470-XXX
DIM_001a.ds4
SE1470-XXXL
DIM_001b.ds4
INFRA-63.TIF
Tolerance
OUTLINE DIMENSIONS in inches (mm)
.062(1.57) DIA
.062(1.57) DIA
.079(2.01)
.076(1.93)
.079(2.01)
.076(1.93)
.122(3.10)
.106(2.69)
.122(3.10)
.106(2.69)
.091(2.26)
.091(2.26)
DIA
DIA
3 plc decimals
2 plc decimals
~ ~
TYPICAL MIN
1.000(25.40)
1.000(25.40)
.010(0.25)
.010(0.25)
MIN
CATHODE (CASE)
CATHODE
Honeywell reserves the right to make
changes in order to improve design and
supply the best products possible.
±0.005(0.12)
±0.020(0.51)
ANODE
ANODE
.020(0.51)
.020
(0.51) DIA
.020
(0.51) DIA
DIA
.095(2.41) DIA
.095(2.41) DIA
~ ~

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SE1470-003 Summary of contents

Page 1

... Mechanically and spectrally matched to SD1420 photodiode, SD1440 phototransistor and SD1410 photodarlington DESCRIPTION The SE1470 is a high intensity aluminum gallium arsenide infrared emitting diode mounted in a glass lensed metal can coaxial package. The package may have a tab or second lead welded to the can as an optional feature (SE1470-XXXL) ...

Page 2

... SE1470 AlGaAs Infrared Emitting Diode ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL ABSOLUTE MAXIMUM RATINGS (25¡C Free-Air Temperature unless otherwise noted) Continuous Forward Current Power Dissipation Operating Temperature Range Storage Temperature Range Soldering Temperature (10 sec) Notes 1. Derate linearly from 25¡C free-air temperature at the rate of 0.71 mW/¡ ...

Page 3

... SE1470 AlGaAs Infrared Emitting Diode Fig. 1 Radiant Intensity vs Angular Displacement 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 -40 -30 -20 -10 0 +10 +20 +30 +40 Angular displacement - degrees Fig. 3 Forward Voltage vs Forward Current 1.6 1.5 1.4 1.3 1.2 1.1 1 Forward current - mA Fig ...

Page 4

... SE1470 AlGaAs Infrared Emitting Diode Fig. 7 Relative Power Output vs Free Air Temperature 0.2 0.1 -50 -25 0 +25 + Free-air temperature - (°C) A All Performance Curves Show Typical Values Honeywell reserves the right to make changes in order to improve design and supply the best products possible. ...

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