SMCJ22CA Taiwan Semiconductor, SMCJ22CA Datasheet - Page 2

• Manufacturer Part Number: SMCJ22CA
• Description: DIODE, TVS, 22V, 1500W, SMC
• Manufacturer: Taiwan Semiconductor

Specifications of SMCJ22CA

• Reverse Stand-off Voltage Vrwm: 22V
• Breakdown Voltage Range: 24.4V To 26.9V
• Clamping Voltage Vc Max: 35.5V
• Diode Configuration: Bidirectional
• Peak Pulse Current Ippm: 44A
• Diode Case Style: SMC
• No. Of: RoHS Compliant
• Polarity: Bidirectional
• Channels: 1 Channel
• Clamping Voltage: 35.5 V
• Operating Voltage: 22 V
• Package / Case: DO-214AB
• Breakdown Voltage: 24.4 V
• Peak Surge Current: 200 A
• Peak Pulse Power Dissipation: 1500 W (Min)
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 55 C
• Dimensions: 6.22(Max) mm W x 7.11(Max) mm L
• Lead Free Status / Rohs Status: Details

10000
1000
100
100
100
1.0
150
0.1
10
10
50
0
0.1 s
0
1
FIG.1- PEAK PULSE POWER RATING CURVE
FIG.3- PULSE WAVEFORM
FIG.5- TYPICAL JUNCTION CAPACITANCE
0.31X0.31" (8.0X8.0mm) COPPER PAD AREAS
VWM, REVERSE STAND-OFF VOLTAGE. (V)
MEASURED AT
STAND-OFF
VOLTAGE,V
td
1.0 s
tr=10 sec.
BIDIRECTIONAL
PEAK VALUE
lppm
1.0
WM
RATINGS AND CHARACTERISTIC CURVES (SMCJ SERIES)
10
td. PULSE WIDTH, sec.
t, TIME, ms
10 s
PULSE WIDTH (td) is DEFINED
AS THE POINT WHERE THE PEAK
CURRENT DECAYS to 50% of lppm
HALF VALUE- lpp
2.0
MEASURED AT
ZERO BIAS
10/1000 sec. WAVEFORM
AS DEFINED BY R.E.A.
Tj=25 C
f=1.0MHz
Vsig=50mVp-p
100 s
100
0
2
3.0
NON-REPETITIVE
PULSE WAVEFORM
SHOWN in FIG. 3
T =25 C
A
1.0ms
400
0
10ms
- 369 -
4.0
20,000
10,000
1,000
100
200
100
100
10
10
75
50
25
0
1
FIG.6- TYPICAL JUNCTION CAPACITANCE
0
1
FIG.4- MAXIMUM NON-REPETITIVE FORWARD
FIG.2- PULSE DERATING CURVE
VWM, REVERSE STAND-OFF VOLTAGE. (V)
VR MEASURED AT
STAND-OFF
VOLTAGE,V
SURGE CURRENT
25
50
NUMBER OF CYCLES AT 60Hz
WM
TA, AMBIENT TEMPERATURE. C
10
75
8.3ms Single Half Sine Wave
JEDEC Method
UNIDIRECTIONAL ONLY
100
10
MEASURED AT
ZERO BIAS
Tj=25 C
f=1.0MHz
Vsig=50mVp-p
100
125
0
O
150
400
175
200
100