ICTE8-E3/54 Vishay, ICTE8-E3/54 Datasheet - Page 3

TRANSIENT SUPPRESSOR DIODE,SINGLE,UNIDIRECTIONAL,8V V(RWM),Axial-10

ICTE8-E3/54

Manufacturer Part Number
ICTE8-E3/54
Description
TRANSIENT SUPPRESSOR DIODE,SINGLE,UNIDIRECTIONAL,8V V(RWM),Axial-10
Manufacturer
Vishay
Series
TransZorb®r
Datasheet

Specifications of ICTE8-E3/54

Voltage - Reverse Standoff (typ)
8V
Voltage - Breakdown
9.4V
Power (watts)
1500W
Polarization
Unidirectional
Mounting Type
Through Hole
Package / Case
1.5KE, Axial
Polarity
Unidirectional
Channels
1 Channel
Clamping Voltage
11.5 V
Operating Voltage
8 V
Breakdown Voltage
9.4 V
Termination Style
Axial
Peak Surge Current
100 A
Peak Pulse Power Dissipation
1500 W
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 55 C
Dimensions
5.3 mm Dia. x 5.3 (Max) mm W x 9.5 mm L
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
ICTE8-E3/54
Manufacturer:
VISHAY/威世
Quantity:
20 000
RATINGS AND CHARACTERISTICS CURVES
(T
Document Number: 88356
Revision: 07-May-10
Figure 2. Pulse Power or Current vs. Initial Junction Temperature
A
= 25 °C unless otherwise noted)
100
150
100
100
0.1
10
50
75
50
25
0.1 μs
0
0
1
0
0
Figure 1. Peak Pulse Power Rating Curve
25
t
d
1.0 μs
t
r
= 10 μs
Peak Value
I
PPM
Figure 3. Pulse Waveform
1.0
50
T
J
- Initial Temperature (°C)
t
d
10 μs
75
- Pulse Width (s)
t - Time (ms)
DiodesAmericas@vishay.com, DiodesAsia@vishay.com,
Half Value -
I
PPM
100
2.0
For technical questions within your region, please contact one of the following:
Non-Repetitive Pulse
Waveform shown in Fig. 3
T
A
10/1000 μs Waveform
100 μs
as defined by R.E.A.
T
Pulse Width (t
is defined as the Point
where the Peak Current
decays to 50 % of I
= 25 °C
J
125
= 25 °C
I
PP
2
150
3.0
1.0 ms
d
)
175
PPM
10 ms
ICTE5 thru ICTE18C, 1N6373 thru 1N6386
200
4.0
100 000
100 000
Figure 6. Maximum Non-Repetitive Forward Surge Current
10 000
10 000
1000
1000
Figure 4. Typical Junction Capacitance Uni-Directional
200
100
100
100
50
10
1.0
1.0
1
DiodesEurope@vishay.com
Vishay General Semiconductor
Figure 5. Typical Junction Capacitance
Measured at Stand-Off
Voltage V
Measured at Stand-Off
Voltage V
V
V
Number of Cycles at 60 Hz
WM
BR
BR
WM
Measured at
Zero Bias
Uni-Directional Only
- Breakdown Voltage (V)
- Breakdown Voltage (V)
5
10
10
T
8.3 ms Single Half Sine-Wave
J
Measured at
Zero Bias
= T
10
J
Non-Repetitive Pulse
Waveform shown in Fig. 3
T
max.
A
= 25 °C
T
f = 1.0 MHz
V
Bi-Directional Type
J
sig
= 25 °C
= 50 mV
50
p-p
100
100
www.vishay.com
100
200
200
3

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