FES16DT-E3 Vishay, FES16DT-E3 Datasheet - Page 3

• Manufacturer Part Number: FES16DT-E3
• Description: Diode
• Manufacturer: Vishay

Specifications of FES16DT-E3

• Current Rating: 16A
• Leaded Process Compatible: Yes
• Features: Ultrafast Recovery
• Forward Current If: 16A
• Mounting Type: Through Hole
• Package / Case: TO-220AC
• Diode Type: Ultrafast Recovery
• Repetitive Reverse Voltage Vrrm Max: 200V
• Forward Current If(av): 16A
• Forward Voltage Vf Max: 975mV
• Reverse Recovery Time Trr Max: 35ns
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

RATINGS AND CHARACTERISTICS CURVES
(T
Document Number: 88599
Revision: 07-Jan-08
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
A
= 25 °C unless otherwise noted)
Figure 3. Typical Instantaneous Forward Characteristics
300
250
200
150
100
100
Figure 1. Maximum Forward Current Derating Curve
0.1
20
16
12
50
10
8
4
0
0
1
0.2
1
0
T
J
= 125 °C
0.4
Instantaneous Forward Voltage (V)
Number of Cycles at 60 Hz
0.6
Case Temperature (°C)
50
0.8
T
8.3 ms Single Half Sine-Wave
JEDEC Method
J
[e-mail], [e-mail], [e-mail]
Resistive or Inductive Load
= T
For technical questions within your region, please contact one of the following:
10
J
max.
1.0
T
100
J
= 25 °C
1.2
50 - 200 V
300 - 400 V
500 - 600 V
1.4
150
100
1.6
FES(F,B)16AT thru FES(F,B)16JT
1000
1000
100
100
0.1
10
10
Figure 4. Typical Reverse Leakage Characteristics
1
0.1
0
Vishay General Semiconductor
Percent of Rated Peak Reverse Voltage (%)
Figure 5. Typical Junction Capacitance
20
50 - 400 V
500 - 600 V
Reverse Voltage (V)
1
T
T
J
J
= 100 °C
40
= 25 °C
60
10
T
f = 1.0 MHz
V
J
sig
= 25 °C
= 50 mVp-p
T
50 - 200 V
300 - 400 V
J
80
= 25 °C
www.vishay.com
100
100
3