ES2A-E3/52T Vishay, ES2A-E3/52T Datasheet

FAST RECOVERY DIODE, 2A, 50V, DO-214AA

ES2A-E3/52T

Manufacturer Part Number
ES2A-E3/52T
Description
FAST RECOVERY DIODE, 2A, 50V, DO-214AA
Manufacturer
Vishay
Datasheets

Specifications of ES2A-E3/52T

Repetitive Reverse Voltage Vrrm Max
50V
Forward Current If(av)
2A
Forward Voltage Vf Max
900mV
Reverse Recovery Time Trr Max
20ns
Diode Type
Fast Recovery
Voltage - Forward (vf) (max) @ If
900mV @ 2A
Voltage - Dc Reverse (vr) (max)
50V
Current - Average Rectified (io)
2A
Current - Reverse Leakage @ Vr
10µA @ 50V
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
30ns
Mounting Type
Surface Mount
Package / Case
DO-214AA, SMB
Product
Ultra Fast Recovery Rectifier
Configuration
Single
Reverse Voltage
50 V
Forward Voltage Drop
0.9 V
Recovery Time
30 ns
Forward Continuous Current
2 A
Max Surge Current
50 A
Reverse Current Ir
10 uA
Mounting Style
SMD/SMT
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Capacitance @ Vr, F
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
ES2A-E3/5BT

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
ES2A-E3/52T
Manufacturer:
VISHAY
Quantity:
30 000
Document Number: 88587
Revision: 27-Aug-07
PRIMARY CHARACTERISTICS
MAXIMUM RATINGS (T
PARAMETER
Device marking code
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current at T
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
Operating junction and storage temperature range
ELECTRICAL CHARACTERISTICS (T
PARAMETER
Maximum instantaneous forward
voltage
Maximum DC reverse current at
rated DC blocking voltage
(1)
T
V
I
J
I
F(AV)
FSM
RRM
V
max.
t
rr
F
DO-214AA (SMB)
Surface Mount Ultrafast Plastic Rectifier
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
For technical questions within your region, please contact one of the following:
A
2.0 A
= 25 °C unless otherwise noted)
50 V to 200 V
TEST CONDITIONS
150 °C
0.90 V
20 ns
2.0 A
50 A
L
= 110 °C
A
= 25 °C unless otherwise noted)
T
T
SYMBOL
A
A
T
J
= 100 °C
V
V
= 25 °C
I
I
V
F(AV)
, T
FSM
RRM
RMS
DC
STG
FEATURES
TYPICAL APPLICATIONS
For
freewheeling application in switching mode converters
and inverters for consumer, computer, automotive and
telecommunication.
MECHANICAL DATA
Case: DO-214AA (SMB)
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test, HE3 suffix for high reliability grade
(AEC Q101 qualified), meets JESD 201 class 2
whisker test
Polarity: Color band denotes cathode end
• Glass passivated chip junction
• Ideal for automated placement
• Ultrafast recovery times for high efficiency
• Low forward voltage, low power losses
• High forward surge capability
• Meets MSL level 1, per J-STD-020, LF maximum
• Solder dip 260 °C, 40 s
• Component in accordance to RoHS 2002/95/EC
SYMBOL
peak of 260 °C
and WEEE 2002/96/EC
ES2A
V
I
R
EA
50
35
50
F
use
Vishay General Semiconductor
in
ES2A
ES2B
100
100
high
EB
70
- 55 to + 150
ES2B
2.0
50
frequency
ES2A thru ES2D
0.90
350
ES2C
10
150
105
150
EC
ES2C
rectification
ES2D
200
140
200
ED
ES2D
www.vishay.com
UNIT
UNIT
µA
°C
V
V
V
A
A
V
and
1

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ES2A-E3/52T Summary of contents

Page 1

... RMS 110 ° F(AV) I FSM STG = 25 °C unless otherwise noted) A TEST CONDITIONS SYMBOL ° 100 °C A ES2A thru ES2D Vishay General Semiconductor in high frequency rectification ES2B ES2C ES2D 100 150 200 70 105 140 100 150 200 2 150 ES2A ES2B ES2C ES2D ...

Page 2

... ES2A thru ES2D Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T PARAMETER Max. reverse recovery time Maximum reverse recovery time dI/ A/µ 2 Maximum stored charge dI/ A/µ Typical junction capacitance 4 MHz Note: (1) Pulse test: 300 ms pulse width duty cycle THERMAL CHARACTERISTICS (T PARAMETER ...

Page 3

... MIN. (2.18 MIN.) 0.180 (4.57) 0.160 (4.06) 0.060 MIN. (1.52 MIN.) 0.012 (0.305) 0.006 (0.152) 0.008 (0.2) 0 (0) 0.220 (5.59) 0.205 (5.21) ES2A thru ES2D Vishay General Semiconductor ° 1.0 MHz mVp-p sig 1 10 Reverse Voltage (V) Figure 5. Typical Junction Capacitance Mounting Pad Layout 0 ...

Page 4

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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